Datasheet > V10150C-E3

V10150C-E3

更新时间： 2023-12-06 20:09:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	209K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V10150C-E3 数据手册

V10150C-E3, VF10150C-E3, VB10150C-E3, VI10150C-E3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.63 V at I_F= 3 A

FEATURES

TMBS^®

TO-220AB

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

V10150C

VF10150C

TO-262AA

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, D²PAK (TO-263AB), and

TO-262AA

VB10150C

VI10150C

PIN 1

PIN 3

PIN 1

PIN 2

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

HEATSINK

click logo to get started

DESIGN SUPPORT TOOLS

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Models

Available

Polarity: as marked

Mounting Torque: 10 in-lbs max.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5.0 A

150 V

V_RRM

I_FSM

60 A

V_Fat I_F= 5 A

T_Jmax.

0.69 V

150 °C

TO-220AB, ITO-220AB,

Package

D²PAK (TO-263AB), TO-262AA

Common cathode

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V10150C VF10150C VB10150C VI10150C UNIT

Max. repetitive peak reverse voltage

V_RRM

150

per device

per diode

Max. average forward rectified current (fig. 1)

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

E_AS

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

per diode

I_RRM

0.5

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 18-Jun-2018

Document Number: 89068

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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