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UZHCS756 PDF预览

UZHCS756

更新时间: 2024-11-04 14:45:27
品牌 Logo 应用领域
捷特科 - ZETEX 光电二极管
页数 文件大小 规格书
3页 161K
描述
Rectifier Diode, Schottky, 1 Element, 1.5A, Silicon, SOT-23, 3 PIN

UZHCS756 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PDSO-G3Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.58
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.5 W认证状态:Not Qualified
最大反向恢复时间:0.012 µs表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

UZHCS756 数据手册

 浏览型号UZHCS756的Datasheet PDF文件第2页浏览型号UZHCS756的Datasheet PDF文件第3页 
SOT23 SILICON HIGH CURRENT  
SCHOTTKY BARRIER DIODE “SuperBAT”  
ZHCS756  
ISSUE 1- NOVEMBER 1997  
FEATURES:  
1
Low VF  
C
High Current Capability  
2
1
APPLICATIONS:  
DC - DC converters  
A
3
Mobile telecomms  
PCMCIA  
3
PARTMARK DETAIL: S76  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VR  
VALUE  
60  
UNIT  
V
Continuous Reverse Voltage  
Forward Current (Continuous)  
Forward Voltage @ IF = 750mA  
Average Peak Forward Current; D.C. = 50%  
IF  
750  
mA  
mV  
mA  
VF  
610  
IFAV  
IFSM  
1500  
12  
5
A
A
Non Repetitive Forward Current t100µs  
t10ms  
Power Dissipation at Tamb= 25° C  
Storage Temperature Range  
Junction Temperature  
Ptot  
Tstg  
Tj  
500  
-55 to + 150  
125  
mW  
° C  
° C  
ELECTRICAL CHARACTERISTICS (at T  
= 25° C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)R  
MIN.  
60  
TYP.  
MAX. UNIT CONDITIONS.  
Reverse Breakdown  
Voltage  
80  
V
IR= 300µA  
Forward Voltage  
VF  
250  
285  
350  
440  
520  
600  
760  
290  
330  
410  
500  
610  
700  
900  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
IF= 50mA*  
IF= 100mA*  
IF= 250mA*  
IF= 500mA*  
IF= 750mA*  
IF= 1000mA*  
IF= 1500mA*  
Reverse Current  
IR  
50  
100  
VR= 45V  
µA  
pF  
ns  
Diode Capacitance  
CD  
trr  
17  
12  
f= 1MHz,VR= 25V  
switched from  
IF = 500mA to IR  
Measured at IR  
Reverse Recovery  
Time  
=
500mA  
=
50mA  
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle 2%.  

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