生命周期: | Contact Manufacturer | Reach Compliance Code: | unknown |
风险等级: | 5.79 | 其他特性: | IP 67, REVERSE POLARITY PROTECTION, SHORT CIRCUIT PROTECTION |
主体宽度: | 18.4 mm | 主体高度: | 65 mm |
主体长度或直径: | 30 mm | 外壳: | DIE-CAST ZINC |
最大测量范围(毫米): | 400 mm | 最小测量范围(毫米): | 60 mm |
安装特点: | BOARD MOUNT | 最大工作电流: | 40 mA |
最高工作温度: | 60 °C | 最低工作温度: | -10 °C |
输出接口类型: | 4-WIRE INTERFACE | 输出范围: | 200mA |
输出类型: | ANALOG CURRENT | 封装形状/形式: | RECTANGULAR |
响应时间: | 30000 µs | 传感器/换能器类型: | PROXIMITY SENSOR,ULTRASONIC |
最大供电电压: | 30 V | 最小供电电压: | 12 V |
表面贴装: | NO | 端接类型: | CABLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UZDK30P6112/S14 | IVO |
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Ultrasonic Sensor, 60mm Min, 400mm Max, 200mA, Rectangular, Board Mount | |
UZDK30P6113 | IVO |
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Ultrasonic Sensor, 30mm Min, 250mm Max, 200mA, Rectangular, Board Mount | |
UZDK30P6113/S14 | IVO |
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Ultrasonic Sensor, 30mm Min, 250mm Max, 200mA, Rectangular, Board Mount | |
UZDM4206N | DIODES |
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Small Signal Field-Effect Transistor, 1A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
UZDM4206N | ZETEX |
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Small Signal Field-Effect Transistor, 1A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
UZDM4306N | ZETEX |
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Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
UZDM4306N | DIODES |
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Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
UZDM4306NTA | DIODES |
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Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
UZDM4306NTA | ZETEX |
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Small Signal Field-Effect Transistor, 2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
UZDT1048 | DIODES |
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Power Bipolar Transistor, 5A I(C), 17.5V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, |