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UTC8050S PDF预览

UTC8050S

更新时间: 2024-11-07 03:56:39
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友顺 - UTC 晶体晶体管
页数 文件大小 规格书
2页 80K
描述
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

UTC8050S 数据手册

 浏览型号UTC8050S的Datasheet PDF文件第2页 
UTC 8050S  
NPN EPITAXIAL SILICON TRANSISTOR  
LOW VOLTAGE HIGH CURRENT  
SMALL SIGNAL NPN  
TRANSISTOR  
DESCRIPTION  
The UTC8050S is a low voltage high current small signal  
NPN transistor, designed for Class B push-pull audio  
amplifier and general purpose applications.  
1
FEATURES  
*Collector current up to 700mA  
*Collector-Emitter voltage up to 20 V  
*Complementary to UTC 8550S  
TO-92  
1: EMITTER 2: COLLECTOR 3: BASE  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
VALUE  
UNIT  
V
V
V
W
mA  
°C  
°C  
30  
20  
5
1
700  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Dissipation(Ta=25)  
Collector Current  
Ic  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
150  
-65 ~ +150  
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=100µA,IE=0  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
30  
20  
5
V
V
Ic=1mA,IB=0  
IE=100µA,Ic=0  
V
uA  
nA  
VCB=30V,IE=0  
VEB=5V,Ic=0  
1
Emitter Cut-Off Current  
IEBO  
100  
DC Current Gain(note)  
hFE1  
VCE=1V,Ic=1mA  
VCE=1V,Ic=150 mA  
VCE=1V,Ic=500mA  
Ic=500mA,IB=50mA  
Ic=500mA,IB=50mA  
VCE=1V,Ic=10mA  
VCE=10V,Ic=50mA  
VCB=10V,IE=0  
100  
120  
40  
hFE2  
hFE3  
VCE(sat)  
VBE(sat)  
VBE  
110  
9.0  
400  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
0.5  
1.2  
1.0  
V
V
V
MHz  
pF  
fT  
Cob  
100  
f=1MHz  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R201-011,A  

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