UTC 8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC 8550S
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
V
W
mA
°C
°C
30
20
5
1
700
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25℃)
Collector Current
Ic
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=100µA,IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
30
20
5
V
V
Ic=1mA,IB=0
IE=100µA,Ic=0
V
uA
nA
VCB=30V,IE=0
VEB=5V,Ic=0
1
Emitter Cut-Off Current
IEBO
100
DC Current Gain(note)
hFE1
VCE=1V,Ic=1mA
VCE=1V,Ic=150 mA
VCE=1V,Ic=500mA
Ic=500mA,IB=50mA
Ic=500mA,IB=50mA
VCE=1V,Ic=10mA
VCE=10V,Ic=50mA
VCB=10V,IE=0
100
120
40
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE
110
9.0
400
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
0.5
1.2
1.0
V
V
V
MHz
pF
fT
Cob
100
f=1MHz
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-011,A