2SA1020

更新时间： 2024-01-05 00:17:11

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
4页	172K
描述
PNP EPITAXIAL SILICON TRANSISTOR

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技术参数
数据手册

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2SA1020 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SA1020 数据手册

UTC2SA1020

PNPEPITAXIAL SILICON TRANSISTOR

SILICON PNP EPITAXIAL

TRANSISTOR

DESCRIPTION

The UTC 2SA1020 is designed for power amplifier and

power switching applications.

FEATURES

*Low collector saturation voltage:

VCE(sat)=-0.5V(max.) (IC=-1A)

*High speed switching time: tstg=1.0µs(Typ.)

*Complement to UTC 2SC2655

SOT-89

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector-Base Voltage

-50

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-5

-2

Collector Power Dissipation

Junction Temperature

Storage Temperature

PC*

TSTG

0.5

150

°C

-55 ~ +150

* : Mounted on cermic substrate( 250mm²× 0.8t )

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector cut-off current

Emitter cut-off current

Collector to emitter breakdown

voltage

SYMBOL

I_CBO

TEST CONDITIONS

VCB=-50V, I_E=0

VEB=-5V, I_C=0

MIN TYP MAX UNIT

-1.0

µA

I_EBO

V(BR)CEO

Ic=-10mA, IB=0

-50

DC Current Gain

h_FE1

h_FE2

VCE(sat)

VCE=-2V, IC=-0.5A

VCE=-2V, IC=-1.5A

Ic=-1A, IB=-0.05A

240

-0.5

-1.2

Collector to emitter saturation

voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Switching time

VBE(sat)

Cob

ton

tstg

Ic=-1A, IB=-0.05A

VCE=-2V, Ic=-0.5A

VCB=-10V, IE=0, f=1MHz

MHz

µs

100

0.1

1.0

0.1

Turn-on time

Storage time

Fall time

µs

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R208-021,A

12 3 4

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