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11N40G-TF3-T PDF预览

11N40G-TF3-T

更新时间: 2024-02-08 21:52:34
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 189K
描述
400V N-CHANNEL MOSFET

11N40G-TF3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.64Is Samacsys:N
雪崩能效等级(Eas):520 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):11.4 A最大漏极电流 (ID):11.4 A
最大漏源导通电阻:0.48 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):147 W最大脉冲漏极电流 (IDM):46 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

11N40G-TF3-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
11N40  
Power MOSFET  
400 V N-CHANNEL MOSFET  
„
DESCRIPTION  
The 11N40 uses UTC’s advanced proprietary, planar stripe,  
DMOS technology to provide excellent RDS(ON), low gate charge  
and operation with low gate voltages. This device is suitable for  
use as a load switch or in PWM applications.  
„
FEATURES  
* RDS(ON) = 0.48@VGS = 10 V  
* Ultra low gate charge ( typical 27 nC )  
* Low reverse transfer capacitance ( CRSS = typical 20 pF )  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
11N40L  
11N40G  
2.Drain  
Lead-free:  
Halogen-free:  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
TO-220F  
Packing  
Tube  
Normal  
Lead Free Plating  
11N40L-TF3-T  
Halogen Free  
1
2
3
11N40-TF3-T  
11N40G-TF3-T  
G
D
S
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-219.Aa  

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