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UT8SF2M40MCPC PDF预览

UT8SF2M40MCPC

更新时间: 2024-09-17 00:49:55
品牌 Logo 应用领域
艾法斯 - AEROFLEX 静态存储器
页数 文件大小 规格书
23页 744K
描述
UT8SF2M40 80Megabit Flow-thru SSRAM

UT8SF2M40MCPC 数据手册

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Standard Products  
UT8SF2M40 80Megabit Flow-thru SSRAM  
Preliminary Datasheet  
www.aeroflex.com/memories  
April 2015  
FEATURES  
INTRODUCTION  
Synchronous SRAM organized as 2Meg words x 40bit  
Continuous Data Transfer (CDT) architecture eliminates  
wait states between read and write operations  
Supports 40MHz to 80MHz bus operations  
Internally self-timed output buffer control eliminates the  
need for synchronous output enable  
Registered inputs and outputs for flow-thru operation  
Single 2.5V to 3.3V supply  
Clock-to-output time  
- Clk to Q = 12ns  
Clock Enable (CEN) pin to enable clock and suspend  
operation  
Synchronous self-timed writes  
Three Chip Enables (CS0, CS1, CS2) for simple depth  
expansion  
"ZZ" Sleep Mode option for partial power-down  
"SHUTDOWN" Mode option for deep power-down  
Four Word Burst Capability--linear or interleaved  
Operational Environment  
The UT8SF2M40 is a high performance 83,886,080-bit  
synchronous static random access memory (SSRAM) device  
that is organized as 2M words of 40 bits. This device is  
equipped with three chip selects (CS0, CS1, and CS2), a write  
enable (WE), and an output enable (OE) pin, allowing for  
significant design flexibility without bus contention. The  
device supports a four word burst function using (ADV_LD).  
All synchronous inputs are registered on the rising edge of the  
clock provided the Clock Enable (CEN) input is enabled LOW.  
Operations are suspended when CEN is disabled HIGH and the  
previous operation is extended. Write operation control signals  
are WE and six byte write enables BWE[4:0]. All write  
operations are performed by internal self-timed circuitry.  
For easy bank selection, three synchronous Chip Enables  
(CS0, CS1, CS2) and an asynchronous Output Enable (OE)  
provide for output tri-state control. The output drivers are  
synchronously tri-stated during the data portion of a write  
sequence to avoid bus contention.  
- Total Dose: 100 krad(Si)  
2
- SEL Immune: 100MeV-cm /mg  
-6  
- SEU error rate: 1.7x10 errors/bit-day  
Package options:  
- 288-lead CLGA, CCGA, and CBGA  
Standard Microelectronics Drawing (SMD) 5962-TBD  
- QMLQ and Q+ pending  
36-00-01-005  
Ver. 1.0.0  
Aeroflex Microelectronics Solutions - HiRel  
1

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