Datasheet > UT62L5128(I)

UT62L5128(I)

更新时间： 2025-07-09 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
15页	124K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L5128(I) 数据手册

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UTRON

UT62L5128(I)

512K X 8 BIT LOW POWER CMOS SRAM

Rev. 1.1

REVISION HISTORY

REVISION

DESCRIPTION

DATE

Preliminary Rev. 0.5

Original.

Mar, 2001

1. The symbols CE# and OE# and WE# are revised as.CE

and OE and WE .

2. Separate Industrial and Consumer SPEC.

3. Add access time 55ns range.

1. Add SOP and STSOP package

1. Revised 36-pin TFBGA package outline dimension：

Preliminary Rev. 0.6

Preliminary Rev. 0.7

Jun 21,2001

Dec 18,2001

a、 Rev. 0.7 : ball diameter=0.3mm

b、 Rev. 0.8 : ball diameter=0.35mm

2. Revised DC ELECTRICAL CHARACTERISTICS：

Preliminary Rev. 0.8

Rev. 1.0

Apr 30,2002

Aug 30,2002

a、 Revised V_IHas 2.2V

1. Revised Fast access time : 55/70/100nsꢀ

55ns (max.) for Vcc=3.0V~3.6V

70/100ns (max.) for Vcc=2.7V~3.6V

2. Revised Output Disable to Output in High Z (t_OHZ*) : 30ꢀ35ns

1. Revised Operation surrent :

-Icc(max) 45/35/25mAꢀ40/30/25mA

-Icc(Typ) 30/25/20mAꢀ30/20/16mA

2. Revised Standby current : 20/3uAꢀ20/2uA

3. Revised V_OH(Typ) : NAꢀ2.7V

Rev. 1.1

May 06,2003

4. Add V_IH(max)=V_CC+2.0V for pulse width less than 10ns.

V_IL(min)=V_SS-2.0V for pulse width less than 10ns.

5. Revised AC Table t_OHZ*characteristics

6. Add order information for lead free product

UTRON TECHNOLOGY INC.

P80052

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

12 3 4 5 6 7...15

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