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UT62L25716 PDF预览

UT62L25716

更新时间: 2024-09-30 23:41:07
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
13页 108K
描述
ASYNCHRONOUS STATIC RAM- High Speed

UT62L25716 数据手册

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UTRON  
UT62L25716  
256K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.3  
REVISION HISTORY  
REVISION  
Preliminary Rev. 0.5  
DESCRIPTION  
Draft Date  
Mar, 2001  
Original.  
Rev.1.0  
1.Separate Industrial and Commercial SPEC.  
2.New waveforms.  
Jul. 12,2001  
3.Add access time 55ns range.  
4.The symbols CE1# and OE# and WE# are revised as.  
and  
CE1  
and  
.
WE  
OE  
Rev.1.1  
1.Revised access time 55/70/100ns  
-Rev 1.0: 55ns(max) for Vcc=3.0V~3.6V  
70/100 ns(max) for Vcc=2.7V~3.6V  
Nov. 8. 2002  
2.Revised “SYMBOL” : ꢀ  
CE1 CE  
3.Revised ABSOLUTE MAXIMUM RATINGS  
- VTERM : -0.3 to 4.6 -0.5 to 4.6V  
- PD : 1.0~1.5 1W  
- IOUT : 5020mA  
4.Revised DC CHARACTERISTICS  
- VIH : 2.02.2V  
5.Revised AC CHARACTERISTICS  
- tOH & tBLZ : 510ns  
6.Revised 48-pin TFBGA package outline dimension  
-ball diameter : 0.3mm 0.35mm  
Rev.1.2  
1. Revised Standby current (LL-Version) : 3uA(typ)2uA(typ)  
Dec 03,2002  
2. Revised operating current (Iccmax) : 45/35/25mA40/30/25mA  
3. Revised DC CHARACTERISTICS :  
a. Operating Power Supply Current (Icc)  
55ns (max) : 4540mA  
70ns (typ) : 2520mA, 70ns (max) : 3530mA  
100ns (Typ) : 2016mA  
b. Standby current(CMOS) :  
LL-version (typ) : 32uA, 2520uA  
Rev.1.3  
1. Revised VOH(Typ) : NA2.7V  
May 06.2003  
2. Add VIH(max)=VCC+2.0V for pulse width less than 10ns.  
VIL(min)=VSS-2.0V for pulse width less than 10ns.  
3. Add order information for lead free product  
UTRON TECHNOLOGY INC.  
P80047  
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.  
TEL: 886-3-5777882 FAX: 886-3-5777919  
1

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