Datasheet > UT62L25716(E)

UT62L25716(E)

更新时间： 2024-11-23 23:41:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	108K
描述
ASYNCHRONOUS STATIC RAM- High Speed

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UT62L25716(E) 数据手册

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UTRON

UT62L25716

256K X 16 BIT LOW POWER CMOS SRAM

Rev. 1.3

REVISION HISTORY

REVISION

Preliminary Rev. 0.5

DESCRIPTION

Draft Date

Mar, 2001

Original.

Rev.1.0

1.Separate Industrial and Commercial SPEC.

2.New waveforms.

Jul. 12,2001

3.Add access time 55ns range.

4.The symbols CE1# and OE# and WE# are revised as.

and

CE1

and

Rev.1.1

1.Revised access time ꢀ55/70/100ns

-Rev 1.0: 55ns(max) for Vcc=3.0V~3.6V

70/100 ns(max) for Vcc=2.7V~3.6V

Nov. 8. 2002

2.Revised “SYMBOL” : ꢀ

CE1 CE

3.Revised ABSOLUTE MAXIMUM RATINGS

- V_TERM: -0.3 to 4.6 ꢀ-0.5 to 4.6V

- P_{D :}1.0~1.5 ꢀ1W

- I_OUT: 50ꢀ20mA

4.Revised DC CHARACTERISTICS

- V_IH: 2.0ꢀ2.2V

5.Revised AC CHARACTERISTICS

- t_OH& t_BLZ: 5ꢀ10ns

6.Revised 48-pin TFBGA package outline dimension：

-ball diameter : 0.3mm ꢀ0.35mm

Rev.1.2

1. Revised Standby current (LL-Version) : 3uA(typ)ꢀ2uA(typ)

Dec 03,2002

2. Revised operating current (Iccmax) : 45/35/25mAꢀ40/30/25mA

3. Revised DC CHARACTERISTICS :

a. Operating Power Supply Current (Icc)

55ns (max) : 45ꢀ40mA

70ns (typ) : 25ꢀ20mA, 70ns (max) : 35ꢀ30mA

100ns (Typ) : 20ꢀ16mA

b. Standby current(CMOS) :

LL-version (typ) : 3ꢀ2uA, 25ꢀ20uA

Rev.1.3

1. Revised V_OH(Typ) : NAꢀ2.7V

May 06.2003

2. Add V_IH(max)=V_CC+2.0V for pulse width less than 10ns.

V_IL(min)=V_SS-2.0V for pulse width less than 10ns.

3. Add order information for lead free product

UTRON TECHNOLOGY INC.

P80047

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

12 3 4 5 6 7...13

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