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UT62L2568(E) PDF预览

UT62L2568(E)

更新时间: 2024-09-30 23:41:07
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
14页 139K
描述
ASYNCHRONOUS STATIC RAM- High Speed

UT62L2568(E) 数据手册

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UTRON  
UT62L2568  
256K X 8 BIT LOW POWER CMOS SRAM  
Rev. 1.1  
REVISION HISTORY  
REVISION  
Preliminary Rev. 0.1  
DESCRIPTION  
Release Date  
Jun 18, 2001  
Jul 30, 2002  
Original.  
Rev. 1.0  
1.  
2.  
Revised Power supply  
a55ns (max.) for Vcc=2.7V~3.6V  
b70/100ns (max.) for Vcc=2.5V~3.6V  
Revised DC ELECTRICAL CHARACTERISTICS:  
aRevised VIH as 2.2V  
bRevised standby current ISB1 of LL-version  
Typical : 3uAB2uA  
Maximum : 25uAB20uA  
3.  
4.  
Revised AC ELECTRICAL CHARACTERISTICS:  
aRevised tOH as 10ns (min.)  
Revised 36-pin TFBGA package outline dimension:  
aRev. 0.1 ball diameter=0.3mm  
b
Rev. 1.0 ball diameter=0.35mm  
Rev. 1.1  
1.Revised “FEATURES” Operating current :  
40/35/25mA(ICC max)20/18/15mA (ICC typ.)  
2.TRUTH TABLE & DC ELECTRICAL : Delete ISB2  
3.Revised VTERM : -0.5 to Vcc+0.3V -0.5 to 4.6V  
4.Added VOH : 2.7V at Vcc=3.0V  
Apr 28, 2003  
5.Revised DC (ICC max) 45/35/25mA35/30/25mA  
(ICC typ.) 30/25/20mA20/18/15mA  
6.Add under/overshoot range of VIL & VIH  
7.Revised AC tOHZ*@100ns (max): 35ns30ns  
tWHZ*(max) :30/30/4020/25/30ns  
8.Revised “Data retention Characteristics” :  
IDR-LL (Typ.) : NA1uA, IDR-L (Typ.) : NA10uA  
IDR-LL (Max.) : 25uA6uA  
tR(min) : 5ns”tRC”  
9.Add order information for lead free product  
UTRON TECHNOLOGY INC.  
P80059  
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.  
TEL: 886-3-5777882 FAX: 886-3-5777919  
1

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