是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.66 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏源导通电阻: | 0.028 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 30 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT4812-S08-R | UTC |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812-S08-T | UTC |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812Z | UTC |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812Z_12 | UTC |
获取价格 |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812Z_15 | UTC |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
UT4812ZG-P08-R | UTC |
获取价格 |
Power Field-Effect Transistor | |
UT4812ZG-S08-R | UTC |
获取价格 |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812ZG-S08-T | UTC |
获取价格 |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812ZL-S08-R | UTC |
获取价格 |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE | |
UT4812ZL-S08-T | UTC |
获取价格 |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE |