是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
风险等级: | 5.68 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 0.0185 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 40 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT4800L-S08-R | UTC |
获取价格 |
Power Field-Effect Transistor, 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
UT4800L-S08-T | UTC |
获取价格 |
Power Field-Effect Transistor, 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
UT4800-S08-R | UTC |
获取价格 |
Power Field-Effect Transistor, 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
UT4800-S08-T | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE | |
UT4810D | UTC |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE | |
UT4810D_15 | UTC |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE | |
UT4810DG-S08-R | UTC |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE | |
UT4810DG-S08-T | UTC |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE | |
UT4810DL-S08-R | UTC |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE | |
UT4810DL-S08-T | UTC |
获取价格 |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE |