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UT2301ZG-AE3-R PDF预览

UT2301ZG-AE3-R

更新时间: 2024-01-27 19:28:01
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 160K
描述
2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

UT2301ZG-AE3-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):2.3 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):10 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UT2301ZG-AE3-R 数据手册

 浏览型号UT2301ZG-AE3-R的Datasheet PDF文件第2页浏览型号UT2301ZG-AE3-R的Datasheet PDF文件第3页浏览型号UT2301ZG-AE3-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UT2301Z  
Power MOSFET  
2.3A, 20V P-CHANNEL  
ENHANCEMENT MODE POWER  
MOSFET  
„
DESCRIPTION  
The UTC UT2301Z is a P-channel enhancement mode power  
MOSFET with fast switching speed, low on-resistance and favorable  
stabilization. It can be used in commercial and industrial surface  
mount applications and suited for low voltage applications such as  
DC/DC converters.  
„
FEATURES  
* Very High Density Cell Design for Low On-Resistance  
* Very Good Thermal and Electrical Capabilities  
„
SYMBOL  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Lead Free  
Halogen Free  
UT2301ZG-AE3-R  
1
2
3
UT2301ZL-AE3-R  
S
G
D
Tape Reel  
„
MARKING  
2CA  
L: Lead Free  
G: Halogen Free  
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-281.G  

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