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UT230-80 PDF预览

UT230-80

更新时间: 2024-11-06 01:21:07
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MARKTECH /
页数 文件大小 规格书
4页 269K
描述
LEDs

UT230-80 数据手册

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UltraThin™ LEDs  
CxxxUT230-S0ꢀ00  
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver  
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low  
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the  
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner  
form factors are required.  
FEATURES  
APPLICATIONS  
Small Chip – 230 x 230 x 85 μm  
Low Forward Voltage  
3.3V Typical at 20 mA  
UT LED Performance  
8.0 mW min. (455–475 nm) Blue  
Mobile Phone Keypads  
White LEDs  
Blue LEDs  
Audio Product Display Lighting  
Mobile Appliance Keypads  
Single Wire Bond Structure  
Class 2 ESD Rating  
CxxxUT230-S0ꢀ00 Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
SiC Substrate  
Bottom Surface  
150 x 150 μm  
G•SiC LED Chip  
230 x 230 μm  
InGaN  
Anode (+)  
Mesa (junction)  
176 x 176 μm  
SiC Substrate  
h = 85 μm  
Gold Bond Pad  
105 μm Diameter  
Backside  
Metallization  
80 x 80 μm  
Cathode (-)  
Subject to change without notice.  
www.cree.com  

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