Datasheet > USCD024RH

USCD024RH

更新时间： 2024-02-28 12:15:22

品牌	Logo	应用领域
智威 - ZOWIE		肖特基二极管
页数	文件大小	规格书
2页	203K
描述
Schottky Barrier Diode

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技术参数
数据手册

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USCD024RH 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.76
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.65 V
最大非重复峰值正向电流：	2 A	元件数量：	1
最高工作温度：	125 °C	最大输出电流：	0.2 A
最大重复峰值反向电压：	40 V	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
Base Number Matches：	1

USCD024RH 数据手册

ZOWIE

Schottky Barrier Diode

(40V / 200mA)

USCD024RH

OUTLINE DIMENSIONS

FEATURES

Case : 0603

Unit : mm

Halogen-free type

Compliance to RoHS product

0.05

Lead less chip form, no lead damage

Low power loss, High efficiency

High current capability, low VF

1.6 ± 0.1

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

0.35 ± 0.05

APPLICATION

Switching mode power supply applications

Portable equipment battery applications

High frequency rectification

DC / DC Converter

Telecommunication

Equivalent : SOD-523

MARKING

MECHANICAL DATA

Case : Packed with FRP substrate and epoxy underfilled

Terminals : Pure Tin plated (Lead-Free),

solderable per MIL-STD-750, Method 2026.

Polarity : Laser Cathode band marking

Weight : 0.003 gram

Voltage class

Amps class

Cathode mark

Low IR

Halogen-free type

PACKING

3,000 pieces per 7" (178mm ± 2mm) reel

5 reels per box

6 boxes per carton

Absolute Maximum Ratings (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Rating

Unit

Repetitive peak reverse voltage

Average forward current

VRRM

IF(AV)

200

Peak forward surge current

Junction temperature

IFSM

8.3ms single half sine-wave

2.0

125

^oC

Operating temperature range

Topr

-40 to +125

Storage temperature range

TSTG

-40 to +125

Electrical characteristics (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Min.

Typ.

Max.

Unit

IF = 50mA

IF = 100mA

IF = 200mA

0.35

0.38

0.43

Forward voltage

0.45

VR = @ 10V , Ta = 25 ^oC

Repetitive peak reverse current

Junction capacitance

IRRM

0.5

VR = 4V, f = 1.0 MHz

Rth(JA)

Rth(JL)

Junction to ambient

Junction to lead

160

110

^oC/W

Thermal resistance

REV. 0

2007/11

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