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USB50815C-TR PDF预览

USB50815C-TR

更新时间： 2024-11-29 05:47:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
2页 318K
描述
Trans Voltage Suppressor Diode, 500W, 15V V(RWM), Bidirectional, 4 Element, Silicon, PLASTIC, SO-8

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USB50815C-TR 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOD包装说明：PLASTIC, SO-8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.63其他特性：LOW CAPACITANCE
最小击穿电压：16.7 V配置：SEPARATE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
最大非重复峰值反向功率耗散：500 W元件数量：4
端子数量：8封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：15 V
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED

USB50815C-TR 数据手册

 浏览型号USB50815C-TR的Datasheet PDF文件第2页 
USB50803C thru USB50824C  
Bidirectional Low Capacitance TVSarray ™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration  
giving protection to 2 Bidirectional data or interface lines. It is designed for use in  
applications where very low capacitance protection is required at the board level from  
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-  
2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.  
Using the schematic on the second page, pins 1 & 2 are tied together for the first  
protected line, and pins 7 & 8 are tied together to the ground. The same would then  
occur for a second protected line where pins 3 & 4 are tied together and pins 5 & 6 are  
tied together to the ground. These may also be switched in polarity connections since  
the electrical features are the same in each antiparallel (opposite facing) leg when the  
pins are tied together in this manner for bidirectional protection.  
SO–8  
These TVS arrays have a peak power rating of 500 watts for an 8/20 µsec pulse.  
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS  
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS  
(USB) and I/O transceivers. The USB508XXC product provides board level protection  
from static electricity and other induced voltage surges that can damage or upset  
sensitive circuitry.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
Protects up to 2 bidirectional lines  
•
EIA-RS485 data rates:  
5 Mbs  
Surge protection per IEC 61000-4-2, IEC 61000-4-4  
Provides electrically isolated protection  
UL 94V-0 Flamability Classification  
•
•
•
•
•
10 Base T Ethernet  
USB date rate: 900 Mbs  
Tape & Reel per EIA Standard 481  
13 inch reel; 2,500 pieces (OPTIONAL)  
Carrier tubes; 95 pcs (STANDARD)  
ULTRA LOW CAPACITANCE 3 pF per line pair  
ULTRA LOW LEAKAGE  
•
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)  
Pulse Repetition Rate: < .01%  
•
•
•
•
Molded SO-8 Surface Mount  
Weight 0.066 grams (approximate)  
Marking: Logo, device marking code, date code  
Pin #1 defined by dot on top of package  
ELECTRICAL CHARACTERISTICS  
BREAKDOWN  
CLAMPING  
VOLTAGE  
VC  
CLAMPING  
VOLTAGE  
VC  
STANDBY  
CURRENT  
ID  
CAPACITANCE  
TEMPERATURE  
COEFFICIENT  
OF VBR  
STANDOFF  
VOLTAGE  
VWM  
VOLTAGE  
VBR  
(f=1 MHz)  
C
PART  
DEVICE  
@1 mA  
@ 1 Amp  
(Figure 2)  
VOLTS  
@ 5 Amp  
(Figure 2)  
VOLTS  
@ VWM  
@0V  
αVBR  
NUMBER  
MARKING  
VOLTS  
VOLTS  
MIN  
4
µA  
MAX  
200  
40  
1
pF  
MAX  
3
mV/°C  
MAX  
-5  
MAX  
3.3  
MAX  
8
MAX  
11  
USB50803C  
USB50805C  
USB50812C  
USB50815C  
USB50824C  
3C  
5C  
5.0  
6.0  
10.8  
19  
13  
3
3
1
12C  
15C  
24C  
12.0  
15.0  
24.0  
13.3  
16.7  
26.7  
26  
8
24  
32  
1
3
3
11  
43  
57  
1
28  
Note:  
Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product  
selected voltage should be equal to or greater than the continuous peak operating voltage of the circuit to be  
protected.  
Copyright 2003  
Microsemi  
Page 1  
7-12-2004 REV F  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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