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USB50805C-AE3 PDF预览

USB50805C-AE3

更新时间： 2024-11-25 05:54:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管电视光电二极管局域网
页数 文件大小 规格书
2页 96K
描述
Bidirectional Low Capacitance TVSarray ™

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中文翻译

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USB50805C-AE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.58Is Samacsys：N
其他特性：ULTRA LOW CAPACITANCE最小击穿电压：6 V
击穿电压标称值：6 V最大钳位电压：13 V
配置：SEPARATE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-G8
JESD-609代码：e3最大非重复峰值反向功率耗散：500 W
元件数量：4端子数量：8
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大重复峰值反向电压：5 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

USB50805C-AE3 数据手册

 浏览型号USB50805C-AE3的Datasheet PDF文件第2页 
USB50803C-A thru USB50824C-A, e3  
Bidirectional Low Capacitance TVSarray ™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration  
giving protection to 2 Bidirectional data or interface lines. It is designed for use in  
applications where very low capacitance protection is required at the board level from  
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-  
2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.  
It is also available with either Tin-Lead plated terminations or as RoHS Compliant with  
annealed matte-Tin finish by adding an “e3” suffix to the part number*.  
Using the schematic on the second page, pins 1 & 2 are tied together for the first  
protected line, and pins 7 & 8 are tied together to ground. The same would occur for a  
second protected line where pins 3 & 4 tied together and pins 5 & 6 tied together to the  
ground. These may also be switched in polarity connections since the electrical  
features are the same in each antiparallel (opposite facing) leg when the pins are tied  
together in this manner for bidirectional protection. This device with an “A” suffix is  
opposite in polarity for each pin-to-pin leg to the USB50803C series (see schematic).  
This provides no functional difference for bidirectional TVS protection with the noted  
pins tied together as described above.  
SO–8  
These TVS arrays have a peak power rating of 500 watts for an 8/20 μsec pulse.  
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS  
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS  
(USB) and I/O transceivers. The USB508XXC product provides board level protection  
from static electricity and other induced voltage surges that can damage or upset  
sensitive circuitry.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Protects up to 2 bidirectional lines  
•
EIA-RS485 data rates:  
5 Mbs  
10 Base T Ethernet  
Surge protection per IEC 61000-4-2, IEC 61000-4-4  
Provides electrically isolated protection  
UL 94V-0 Flamability Classification  
RoHS Compliant devices available by adding “e3” suffix  
ULTRA LOW CAPACITANCE 3 pF per line pair  
ULTRA LOW LEAKAGE  
•
•
•
•
•
USB date rate: 900 Mbs  
Tape & Reel per EIA Standard 481  
13 inch reel; 2,500 pieces (OPTIONAL)  
Carrier tubes; 95 pcs (STANDARD)  
•
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)  
Pulse Repetition Rate: < .01%  
•
Molded SO-8 Surface Mount  
•
•
•
Weight 0.066 grams (approximate)  
Marking: Logo, device marking code*, date code  
Pin #1 defined by dot on top of package  
Solder Temperatures: 260°C for 10 s (maximum)  
ELECTRICAL CHARACTERISTICS  
BREAKDOWN  
VOLTAGE  
VBR  
CLAMPING  
VOLTAGE  
VC  
@ 1 Amp  
(Figure 2)  
VOLTS  
CLAMPING  
VOLTAGE  
VC  
@ 5 Amp  
(Figure 2)  
VOLTS  
STANDBY  
CURRENT  
ID  
CAPACITANCE  
(f=1 MHz)  
C
TEMPERATURE  
COEFFICIENT  
OF VBR  
STANDOFF  
VOLTAGE  
VWM  
DEVICE  
MARKING*  
PART  
NUMBER  
@1 mA  
@ VWM  
@0V  
αVBR  
VOLTS  
VOLTS  
MIN  
4
µA  
MAX  
200  
40  
1
pF  
MAX  
3
mV/°C  
MAX  
-5  
MAX  
3.3  
MAX  
8
MAX  
11  
USB50803C-A  
USB50805C-A  
USB50812C-A  
USB50815C-A  
USB50824C-A  
U3CA  
U5CA  
5.0  
6.0  
10.8  
19  
13  
3
3
1
U12CA  
U15CA  
U24CA  
12.0  
15.0  
24.0  
13.3  
16.7  
26.7  
26  
8
24  
32  
1
3
3
11  
43  
57  
1
28  
*Device marking has an e3 suffix added for the RoHS Compliant option, e.g. U3CAe3, U5CAe3, U12CAe3, U15CAe3, and U24CAe3.  
Copyright © 2006  
Microsemi  
Page 1  
8-01-2006 REV 0  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

中文翻译

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与USB50805C-AE3相关器件

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USB50805CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS C
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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 4 Element, Silicon, ROHS A
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 		暂无描述
USB50805E3/TR13 MICROSEMI

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USB50805E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 2 Element, Silicon, ROHS
USB50805-T7 PROTEC

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 2 Element, Silicon, ROHS
USB50805TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 2 Element, Silicon, PLAST
USB50812 PROTEC

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 		500 WATT MULTI-LINE ULTRA LOW CAPACITANCE TVS ARRAY
USB50812 MICROSEMI

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USB50812C PROTEC

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