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USB50424CE3-TR PDF预览

USB50424CE3-TR

更新时间: 2024-11-25 19:34:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
2页 98K
描述
Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Bidirectional, 1 Element, Silicon

USB50424CE3-TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79其他特性:LOW CAPACITANCE
最小击穿电压:26.7 V外壳连接:ANODE AND CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:24 V表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

USB50424CE3-TR 数据手册

 浏览型号USB50424CE3-TR的Datasheet PDF文件第2页 
USB50403C thru USB50424C, e3  
Bidirectional TVSarray ™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) is packaged in an SOT-143  
configuration giving protection to 1 Bidirectional data or interface line. It is designed  
for use in applications where protection is required at the board level from voltage  
transients caused by electrostatic discharge (ESD) as defined in IEC 61000–4-2,  
electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.  
It is also available with either Tin-Lead plated terminations or as RoHS Compliant  
with annealed matte-Tin finish by adding an “e3” suffix to the part number*.  
These TVS arrays have a peak power rating of 500 watts for an 8/20 μsec pulse.  
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS  
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS  
(USB) and I/O transceivers. The USB504xxC product provides board level  
protection from static electricity and other induced voltage surges that can damage  
or upset sensitive circuitry.  
SOT–143  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Protects 1 bidirectional line  
EIA-RS485 data rates:  
5 Mbs  
10 Base T Ethernet  
Surge protection per IEC 61000-4-2, IEC 61000-4-4  
Provides electrically isolated protection  
UL 94V-0 Flamability Classification  
RoHS Compliant devices available by adding e3 suffix  
ULTRA LOW CAPACITANCE 3 pF per line pair  
ULTRA LOW LEAKAGE  
USB date rate: 900 Mbs  
Tape & Reel per EIA Standard 481-1-A  
7 inch reel; 3,000 pieces per reel  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)  
Pulse Repetition Rate: < .01%  
Molded SOT-143 Surface Mount  
Weight: 0.035 grams (approximate)  
Body marked with device marking code* (see below)  
Pin #1 defined by dot on top of package  
ELECTRICAL CHARACTERISTICS  
STAND OFF  
VOLTAGE  
VWM  
BREAKDOWN  
VOLTAGE  
VBR  
CLAMPING  
VOLTAGE  
VC  
@ 1 Amp  
(Figure 2)  
VOLTS  
CLAMPING  
VOLTAGE  
VC  
@ 5 Amp  
(Figure 2)  
VOLTS  
STANDBY  
CURRENT  
ID  
CAPACITANCE  
(f=1 MHz)  
C
TEMPERATURE  
COEFFICIENT  
OF VBR  
DEVICE  
MARKING*  
PART  
NUMBER  
@1 mA  
@ VWM  
@0V  
αVBR  
VOLTS  
MAX  
3.3  
VOLTS  
MIN  
4
µA  
MAX  
200  
40  
1
pF  
MAX  
3
mV/°C  
MAX  
-5  
MAX  
8
MAX  
11  
USB50403C  
USB50405C  
USB50412C  
USB50415C  
USB50424C  
53  
55  
5.0  
6.0  
10.8  
19  
13  
3
3
1
512  
515  
524  
12.0  
15.0  
24.0  
13.3  
16.7  
26.7  
26  
8
24  
32  
1
3
3
11  
43  
57  
1
28  
*Device marking has an e3 suffix added for the RoHS Compliant option, e.g. 53e3, 55e3, 512e3, 515e3, and 524e3.  
Copyright © 2005  
6-28-2005 REV K  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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