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USB10H PDF预览

USB10H

更新时间: 2024-09-23 22:41:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 242K
描述
Dual P-Channel 2.5V Specified PowerTrench MOSFET

USB10H 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPERSOT-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.9 A最大漏极电流 (ID):1.9 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.96 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

USB10H 数据手册

 浏览型号USB10H的Datasheet PDF文件第2页浏览型号USB10H的Datasheet PDF文件第3页浏览型号USB10H的Datasheet PDF文件第4页浏览型号USB10H的Datasheet PDF文件第5页浏览型号USB10H的Datasheet PDF文件第6页浏览型号USB10H的Datasheet PDF文件第7页 
February 1999  
USB10H  
Dual P-Channel 2.5V Specified PowerTrench MOSFET  
Features  
General Description  
These P-Channel 2.5V specified MOSFETs are produced  
using Fairchild Semiconductor's advanced PowerTrench  
process that has been especially tailored to minimize  
on-state resistance and yet maintain low gate charge for  
superior switching performance.  
-1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 V  
RDS(on) = 0.250@ VGS = -2.5 V  
Low gate charge (3 nC typical).  
Fast switching speed.  
These devices have been designed to offer exceptional  
power dissipation in a very small footprint for applications  
where the bigger more expensive SO-8 and TSSOP-8  
packages are impractical.  
High performance trench technology for extremely  
low RDS(ON)  
.
TM  
SuperSOT -6 package: small footprint (72% smaller  
Applications  
than standard SO-8); low profile (1mm thick).  
Load switch  
Battery protection  
Power management  
D2  
S1  
3
2
1
4
5
6
D1  
G2  
S2  
SuperSOTTM-6  
G1  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
V
V
A
±
8
(Note 1a)  
Drain Current - Continuous  
- Pulsed  
-1.9  
-5  
(Note 1a)  
(Note 1b)  
PD  
Power Dissipation for Single Operation  
0.96  
0.9  
W
(Note 1c)  
0.7  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°
C
Thermal Characteristics  
(Note 1a)  
(Note 1)  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
130  
60  
°
°
Rθ  
C/W  
C/W  
JA  
Rθ  
JC  
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
USB10H  
7’’  
8mm  
3000 units  
.
306  
1999 Fairchild Semiconductor Corporation  
USB10H Rev. C  

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