Datasheet > US3JB

US3JB

更新时间： 2024-09-21 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	392K
描述
3.0A patch fast recovery diode 600V SMB series

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中文翻译

获取价格

数据手册

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US3JB 数据手册

US3AB - US3MB

SURFACE MOUNT ULTRA FAST RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 3.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Low Power Loss

Ultra-Fast Recovery Time

SMB(DO-214AA)

Plastic Case Material has UL Flammability

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Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

Classification Rating 94V-O

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

All Dimensions in mm

Weight: 0.093 grams (approx.)

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

Unit

US3AB US3BB US3DB US3GB US3JB US3KB US3MB

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600 800 1000

420 560 700

RRM

RMS

100

600 800 1000

Maximum DC blocking voltage

Maximum average forward rectified current

(AV)

3.0

0.375”(9.5mm) lead length at TA=55 C

Peak forward surge current

FSM

100.0

1.30

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0A

1.0

1.70

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

TA=25 C

5.0

250.0

µA

TA=100 C

(NOTE 1)

trr

Typical junction capacitance (NOTE 2)

C/W

Typical thermal resistance

Operating junction and storage temperature range

15.0

TJ,TSTG

-65 to +150

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

1 of 2

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