Datasheet > US3J

US3J

更新时间： 2024-09-21 07:05:35

品牌	Logo	应用领域
DIOTECH		/
页数	文件大小	规格书
2页	844K
描述
SURFACE MOUNT ULTRA FAST RECTIFIER

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中文翻译

获取价格

数据手册

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US3J 数据手册

US3A THRU US3M

SURFACE MOUNT ULTRA FAST RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 3.0 Ampere

FEATURES

SMC ( DO-214AB )

● The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

● Ultra fast switching for high efficiency

● Low reverse leakage

● High forward surge current capability

● High temperature soldering guaranteed:

.128(3.25)

.108(2.75)

.245(6.22)

.220(5.59)

250 C/10 seconds

.280(7.11)

.260(6.60)

.012(.305)

.006(.152)

MECHANICAL DATA

.103(2.62)

.079(2.00)

Case: JEDEC DO-214AB molded plastic body

Terminals: DO-214AB solder plated, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

.008(.203)

.002(.051)

.060(1.52)

.030(0.76)

.320(8.13)

.305(7.75)

Weight: 0.20 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

Characteristic

UNITS

US3A US3B US3D US3G US3J US3K US3M

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200 400

140 280

200 400

600 800 1000

420 560 700

600 800 1000

V^RRM

VRMS

VDC

100

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^A=55 C

Peak forward surge current

I(AV)

3.0

IFSM

100.0

1.30

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0A

1.0

1.70

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

T^A=25 C

T^A=100 C

(NOTE 1)

5.0

250.0

µA

t^rr

Typical junction capacitance (NOTE 2)

C/W

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

R ^JL

15.0

TJ,TSTG

-65 to +150

Note:1.Reverse recovery condition I^F=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.Thermal resistance from junction to lead and from junction to ambient with P.C.B mounted

on 0.3 x 0.3" (8.0 x 8.0 mm) Copper pad area

中文翻译

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