Datasheet > US1MB

US1MB

更新时间： 2024-11-13 22:41:39

品牌	Logo	应用领域
SSE		开关
页数	文件大小	规格书
1页	19K
描述
SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER

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中文翻译

获取价格

数据手册

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US1MB 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

US1AB THRU US1MB

SURFACE MOUNT ULTRA

FAST SWITCHING RECTIFIER

TECHNICAL

SPECIFICATION

VOLTAGE: 50 TO 1000V CURRENT: 1.0A

FEATURES

• Ideal for surface mount pick and

place application

SMB/DO-214AA

• Low profile package

• Built-in strain relief

• High surge capability

• Glass passivated chip

• Ultra fast recovery for high efficiency

• High temperature soldering guaranteed:

260^oC/10sec/at terminal

MECHANICAL DATA

• Terminal: Plated leads solderable per

MAX. .155(3.94) .180(4.57) .083(2.11) .012(0.305)

MIN. .130(3.30) .160(4.06) .077(1.96) .006(0.152)

MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

MAX. .220(5.59) .096(2.44) .008(0.203) .060(1.52)

MIN. .205(5.21) .084(2.13) .004(0.102) .030(0.76)

Dimensions in inches and (millimeters)

• Polarity: Color band denotes cathode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,

derate current by 20%)

US1 US1 US1 US1 US1 US1 US1

AB BB DB GB JB KB MB

RATINGS

SYMBOL

UNITS

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(T_L=100^oC)

100 200 400 600 800 1000

I_F(AV)

1.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

I_FSM

V_F

1.0

1.4

1.7

T_a=25^oC

5.0

Maximum DC Reverse Current

µA

I_R

T_a=100^oC

200

(at rated DC blocking voltage)

Maximum Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

(Note 3)

trr

C_J

^oC/W

^oC

R_θ(ja)

-50 to +150

_STG,T_J

Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I_F=0.5A, I_R=1.0A,Irr=0.25A.

2.Measured at 1.0 MHz and applied voltage of 4.0V_dc

3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area

http://www.sse-diode.com

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