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US1M-HE3 PDF预览

US1M-HE3

更新时间: 2024-09-24 20:48:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 418K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

US1M-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.03
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

US1M-HE3 数据手册

 浏览型号US1M-HE3的Datasheet PDF文件第2页浏览型号US1M-HE3的Datasheet PDF文件第3页浏览型号US1M-HE3的Datasheet PDF文件第4页浏览型号US1M-HE3的Datasheet PDF文件第5页 
US1A thru US1M  
Vishay General Semiconductor  
Surface Mount Ultrafast Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 1000 V  
30 A  
50 ns, 75 ns  
1.0 V, 1.7 V  
150 °C  
VF  
Tj max.  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low switching losses, high efficiency  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer, automotive and  
Telecommunication  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol US1A US1B US1D US1G US1J US1K US1M Units  
Device Marking Code  
UA  
50  
UB  
UD  
UG  
UJ  
UK  
UM  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
200  
400  
600  
800  
1000  
V
V
V
A
A
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current at TL = 110 °C  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
30  
Operating and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88768  
05-Aug-05  
www.vishay.com  
1

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