Datasheet > US1M

US1M

更新时间： 2023-12-06 20:00:46

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2483K
描述
SMAG

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数据手册

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US1M 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SMAG Plastic-Encapsulate Diodes

High Efficient Rectifier Diodes

US1A THRU US1M

Features

SMAG

●I_F(AV)

●VRRM

50V-1000V

●High surge current capability

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

●US1X

X From A To M

Limiting Values(Absolute Maximum Rating)

US1

Item

Symbol

Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

100

800 1000

600

200 400

140 280 420 560

700

RMS

60Hz Half-sine wave，

Resistance load

Average Forward Current

1.0

I_F(AV)

60Hz Half-sine wave，

1 cycle，Ta=25℃

Surge(Non-repetitive)Forward

Current

I_FSM

Operation Junction and

Storage Temperature Range

T_J,T_STG

℃

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

US1

Symbol

Unit

Test Condition

Item

V_F

I_F=1.0A

Peak Forward Voltage

1.0

1.3

1.7

Maximum reverse recovery

time

I =0.5A,I =1.0A,I

_rr=0.25A

I_RRM1

I_RRM2

T =25℃

V_RM=V_RRM

Peak Reverse Current

μA

T =125℃

Between junction and ambient

Between junction and terminal

R_θ

J-A

Thermal

Resistance(Typical)

℃/

R_θ

J-L

Juction Capacitance

(Typical)

Measured at 1MHZ and Applied

Reverse Voltage of 4.0 V.D.C

Notes:

Thermal resistance from junction to ambient and from juction to lead mounted on FR4 PCB double sided copper mini pad

www.jscj-elec.com

Rev. - 1.2

12 3 4 5

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