5秒后页面跳转
US1M PDF预览

US1M

更新时间: 2024-09-26 05:34:47
品牌 Logo 应用领域
台冠 - TDD 二极管光电二极管
页数 文件大小 规格书
2页 152K
描述
US1M SMA 1A 1000V

US1M 数据手册

 浏览型号US1M的Datasheet PDF文件第2页 
US1A - US1M  
D A Y A  
- TDD-  
1.0 Amps. Surface Mount High Efficient Rectifiers  
SMA/DO-214AC  
Features  
Glass passivated junction chip  
For surface mounted application  
Low profile package  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
Ultrafast recovery time for high efficiency  
Low forward voltage, low power loss  
High temperature soldering guaranteed:  
260oC/10 seconds on terminals  
Plastic material used carries Underwriters  
Laboratory Classification 94V0  
Mechanical Data  
Dimensions in inches and (millimeters)  
Cases: Molded plastic  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: Indicated by cathode band  
Weight: 0.064 gram  
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol US1A US1B US1D US1G US1J US1K US1M Units  
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
100 200 400  
00  
800 1000  
Maximum Average Forward Rectified Current  
@ TL=110 oC  
I(AV)  
IFSM  
1.0  
A
A
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
30  
Maximum Instantaneous Forward Voltage  
@ 1.0A  
VF  
IR  
1.0  
1.7  
V
Maximum DC Reverse Current  
@ TA =25 oC at Rated DC Blocking Voltage  
@ TA=125 oC  
5.0  
150  
uA  
uA  
nS  
Maximum Reverse Recovery Time ( Note 1 )  
Trr  
Cj  
50  
75  
10  
Typical Junction Capacitance ( Note 2 )  
Maximum Thermal Resistance (Note 3)  
15  
75  
27  
pF  
R
θJA  
oC/W  
R
θJL  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to + 150  
oC  
TSTG  
oC  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.  
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China  

与US1M相关器件

型号 品牌 获取价格 描述 数据表
US1M (UF1M) HOTTECH

获取价格

SMA(DO-214AC)
US1M(LS) DIODES

获取价格

1.0A SURFACE MOUNT ULTRA FAST RECTIFIER
US1M-13-F DIODES

获取价格

1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER
US1M-7 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
US1M-A ANBON

获取价格

SMA
US1MAF LGE

获取价格

暂无描述
US1MAF CZSTARSEA

获取价格

SMAF
US1MAFC PANJIT

获取价格

SMAF-C
US1MAS CZSTARSEA

获取价格

SMAS
US1MB SSE

获取价格

SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER