Datasheet > US1JFL

US1JFL

更新时间： 2025-07-19 18:04:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	409K
描述
Ultra-Fast Recovery Rectifier

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中文翻译

获取价格

数据手册

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US1JFL 数据手册

SMD Type

Diodes

Ultrafast Recovery Rectifierꢀ

US1A'- ~ US1M'-

SOD-123FL

Ƶ Features

ƽ For surface mounted applications

ƽ Low profile package

ƽ Glass Passivated Chip Junction

ƽ High efficiency

Top View

PINNING

DESCRIPTION

Cathode

Anode

Ƶ Maximum Ratings and Electrical Characteristics

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6LQJOHꢀSKDVHꢀKDOIꢀZDYHꢀꢄꢅꢀ+]ꢆꢀUHVLVWLYHꢀRUꢀLQGXFWLYHꢀORDGꢃꢀ)RUꢀFDSDFLWLYHꢀORDGꢆꢀGHUDWHꢀFXUUHQWꢀE\ꢀꢁꢅꢇ

US1A)/ US1B)/ US1D)/ US1G)/US1J)/ US1K)/ US1M)/

Parameter

Symbol

V_RRM

Unit

Repetitive Peak Reverse Voltage

100

200

400

600

800

1000

Maximum RMS Voltage

140

200

280

400

420

600

560

800

700

V_RMS

V_DC

Maximum DC Blocking Voltage

100

1000

1.0

1.65

Instantaneous Forward Voltage at I_F=1.0A

V_F

1.3

Maximum Average Forward Rectified Current

@TC = 125°C

1.0

I_F(AV)

Peak Forward Surge Current 8.3 ms Single

Half Sine-wave Superimposed on Rated Load

I_FSM

Maximum DC Reverse Current T_A=25ć

I_R

ȝA

100

at rated DC blocking voltage

Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

Junction Temperature

T_A=125ć

t_rr

C_j

ഒꢈ:

ೃJA

150

-55 to 150

Storage Temperature

T_stg

* 1 Reverse recovery test conditon: I_F= 0.5 A, I_R= 1 A, Irr = 0.25 A

* 2 Measured at 1MHz and applied reverse voltage of 4V D.C

* 3 P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas.

Ƶ Marking

NO.

US1A)/ US1B)/ US1D)/ US1G)/ US1J)/ US1K)/ US1M)/

USL USM USH

Marking

www.kexin.com.cn

12 3

中文翻译

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