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US1GF

更新时间: 2023-12-06 20:01:54
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
3页 840K
描述
快恢复整流管

US1GF 数据手册

 浏览型号US1GF的Datasheet PDF文件第2页浏览型号US1GF的Datasheet PDF文件第3页 
US1AF THRU US1MF  
Surface Mount Ultrafast Recovery Rectifier  
Reverse Voltage - 50 to 1000 V  
Forward Current - 1 A  
PINNING  
Features  
PIN  
1
DESCRIPTION  
Cathode  
• Glass Passivated Chip Juntion  
• For surface mount applications  
• Low profile package  
• Easy to pick and place  
• High efficiency  
Anode  
2
1
2
Top view  
Plastic Package : SMAF  
Mechanical Data  
Case: SMAF  
Terminals: Solderable per  
MIL-STD-750, method 2026  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta = 25  
ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive  
load, for capacitive load current derate by 20%.  
Symbols US1AF US1BF US1DF US1GF US1JF US1KF US1MF Units  
Parameter  
Marking US1A US1B US1D US1G US1J US1K US1M  
-
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
V
V
V
Maximum DC Blocking Voltageat  
100  
800 1000  
Maximum Average Forward Rectified Current  
at TC = 125°Ϲ  
IF(AV)  
1
A
Peak Forward Surge Current 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load  
IFSM  
VF  
IR  
30  
A
V
Maximum Forward Voltage at 1 A  
1
1.3  
1.65  
75  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25°Ϲ  
Ta = 125°Ϲ  
5
100  
μA  
Maximum Reverse Recovery Time 1)  
Typical Junction Capacitance 2)  
Typical Thermal Resistance 3)  
trr  
50  
ns  
Cj  
15  
80  
pF  
°Ϲ/W  
°Ϲ  
RJA  
Operating and Storage Temperature Range  
Tj, Tstg  
- 55 to + 150  
1) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A  
2) Measured at 1 MHz and applied reverse voltage of 4 V D.C  
3) P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
®
1 / 3  
Dated: 25/01/2022 JD Rev06  

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