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US1G

更新时间: 2023-12-06 20:04:07
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4页 41K
描述
SMD

US1G 数据手册

 浏览型号US1G的Datasheet PDF文件第2页浏览型号US1G的Datasheet PDF文件第3页浏览型号US1G的Datasheet PDF文件第4页 
®
US1A – US1M  
1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Ultra-Fast Recovery Time  
Ideally Suited for Use in High Frequency  
B
D
A
F
SMPS, Inverters and As Free Wheeling Diodes  
C
H
G
E
SMA/DO-214AC  
Min  
Mechanical Data  
Dim  
A
Max  
2.92  
4.60  
1.90  
0.305  
5.30  
2.44  
0.203  
1.52  
Case: SMA/DO-214AC, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
2.29  
B
4.00  
C
1.27  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.064 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
4.80  
E
F
2.00  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
US1A US1B US1D US1G US1J US1K US1M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current  
@TL = 110°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
50  
µA  
Reverse Recovery Time (Note 1)  
trr  
50  
20  
75  
15  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJL  
75  
27  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with 5.0mm x 5.0mm copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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