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US1A

更新时间: 2024-10-28 14:51:51
品牌 Logo 应用领域
江苏长电/长晶 - CJ 瞄准线光电二极管
页数 文件大小 规格书
5页 2483K
描述
SMAG

US1A 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
AG Plastic-Encapsulate Diodes  
High Efficient Rectifier Diodes  
US1A THRU US1M  
Features  
SMAG  
IF(AV)  
1A  
VRRM  
50V-1000V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
US1X  
:
X From A To M  
Limiting Values(Absolute Maximum Rating)  
US1  
Item  
Symbol  
Unit  
V
Test Conditions  
A
B
D
G
J
K
M
VRRM  
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
50  
100  
70  
800 1000  
600  
200 400  
35  
140 280 420 560  
700  
V
V
RMS  
60Hz Half-sine wave  
Resistance load  
Average Forward Current  
1.0  
IF(AV)  
A
A
60Hz Half-sine wave  
1 cycleTa=25℃  
Surge(Non-repetitive)Forward  
Current  
30  
IFSM  
Operation Junction and  
Storage Temperature Range  
TJ,TSTG  
-55 ~ +150  
Electrical Characteristics (T=25Unless otherwise specified  
US1  
Symbol  
Unit  
Test Condition  
Item  
A
B
D
G
J
K
M
VF  
IF =1.0A  
Peak Forward Voltage  
V
1.0  
1.3  
1.7  
Maximum reverse recovery  
time  
ns  
I =0.5A,I =1.0A,I  
t
rr=0.25A  
F
R
50  
rr  
75  
IRRM1  
IRRM2  
T =25  
5
a
VRM=VRRM  
Peak Reverse Current  
μA  
T =125  
a
50  
Between junction and ambient  
Between junction and terminal  
75  
27  
12  
Rθ  
J-A  
Thermal  
Resistance(Typical)  
/  
W
Rθ  
J-L  
Juction Capacitance  
(Typical)  
Measured at 1MHZ and Applied  
Reverse Voltage of 4.0 V.D.C  
pF  
Cj  
6
14  
Notes:  
Thermal resistance from junction to ambient and from juction to lead mounted on FR4 PCB double sided copper mini pad  
www.jscj-elec.com  
1
Rev. - 1.2  

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