Datasheet > UPT28B

UPT28B

更新时间： 2024-10-14 20:42:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
3页	179K
描述
Trans Voltage Suppressor Diode, 1000W, 28V V(RWM), Bidirectional, 1 Element, Silicon,

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中文翻译

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技术参数
数据手册

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UPT28B 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	R-PDSO-G1
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.82
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	R-PDSO-G1
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	1000 W
元件数量：	1	端子数量：	1
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	认证状态：	Not Qualified
最大重复峰值反向电压：	28 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	TIN LEAD
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

UPT28B 数据手册

UPT5 – UPT48

UPTB5 – UPTB48

SURFACE MOUNT TRANSIENT

VOLTAGE SUPPRESSORS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

Microsemi’s new Powermite UPT series transient voltage suppressors

feature oxide-passivated chips, with high-temperature solder bonds for high

surge capability, and negligible electrical degradation under repeated surge

conditions.

In addition to its size advantages, Powermite package includes a full

metallic bottom that eliminates the possibility of solder flux entrapment at

assembly and a unique locking tab serving as an integral heat sink.

DO-216

Innovative design makes this device fully compatible for use with

automatic insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Powermite Package with standoff voltages 5 to 48 V

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Both unidirectional and Bidirectional Versions

Available as “UPT” and “UPTB” respectively

Protection from switching transients & induced

•

Peak Pulse Power 1000 W for 8/20 µs pulse

Clamping Time in pico-seconds

Integral heat sink / locking tabs

Compliant to IEC61000-4-2 and IEC61000-4-4

for ESD and EFT protection respectively

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Full metallic bottom eliminates flux entrapment

Moisture classification is Level 1 with no dry pack

Class 1: UPT/UPTB5 to 17

Class 2: UPT/UPTB5 to 12

Class 3: UPT/UPTB5

required per IPC/JEDEC J-STD-020B

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, or JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers, e.g. MXUPT15,

MVUPTB28, MSPUPT10, etc.

•

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1: UPT/UPTB5 to 8

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

•

Operating and Storage Temperature: –65ºC to

epoxy compound meeting UL94V-0

+150ºC

FINISH: Tin-Lead plated over copper and readily

solderable per MIL-STD-750, method 2026

POLARITY: Cathode designated by TAB 1

MARKING: The last three digits of part number,

e.g. UPT5 is T05, UPT12 is T12, UPT24 is T24,

UPTB5 is B05, UPTB12 is B12, UPTB24 is B24,

etc.

Peak Pulse Power: 1000 W at 8/20 µs pulse (See

Figure 1 and 2).

•

Peak Pulse Power: 150 W at 10/1000 µs pulse (See

Figure 2).

•

Impulse Repetition Rate (duty factor): 0.01%

Thermal resistance: 15ºC/W junction to base tab or

85ºC/W junction to ambient when mounted on FR4

PC board with 1 oz copper

Steady-State Power: 2.5 Watts

Solder Temperatures: 260ºC for 10 s (maximum)

•

WEIGHT: 0.016 gram (approximate)

See package dimension on last page

Tape & Reel option: Standard per EIA-481-B

7 inch 3,000 pieces and 13 inch 12,000 pieces

•

Microsemi

Page 1

1-19-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与UPT28B相关器件

型号	品牌	获取价格	描述	数据表
UPT28E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT28E3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT28RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT28RE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT28RTR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT28RTR13E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT28RTR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT28RTR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT28TR13	MICROSEMI	获取价格	暂无描述
UPT28TR13E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 28V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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