Datasheet > UPT10E3/TR7

UPT10E3/TR7

更新时间： 2024-11-25 08:58:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	162K
描述
Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

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UPT10E3/TR7 数据手册

UPT5e3 – UPT48e3

UPT5Re3 – UPT48Re3

UPTB8e3 – UPTB48e3

SURFACE MOUNT TRANSIENT

VOLTAGE SUPPRESSORS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

Microsemi’s new Powermite UPT series transient voltage suppressors

feature oxide-passivated chips, with high-temperature solder bonds for high

surge capability, and negligible electrical degradation under repeated surge

conditions. Both unidirectional and bidirectional configurations are available.

In addition to its size advantages, Powermite package includes a full

metallic bottom (cathode) that eliminates possibility of solder flux entrapment

at assembly and a unique locking tab serving as an integral heat sink.

DO-216AA

Innovative design makes this device fully compatible for use with automatic

insertion equipment.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Powermite Package with standoff voltages 5 to 48 V

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Both Unidirectional polarities and Bidirectional:

Anode to case bottom (UPT5e3 thru UPT48e3)

Cathode to case bottom (UPT5Re3 thru UPT48Re3)

Bidirectional (UPTB8e3 thru UPTB48e3)

•

Protection from switching transients & induced RF

New improved lower leakage current for the

UPT5Re3

•

Clamping time less than 100 pico-seconds for

unidirectional

•

Integral heat sink / locking tabs

Full metallic bottom eliminates flux entrapment

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

RoHS Compliant with e3 suffix part number

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: UPT5//UPT5R/UPTB8 to17

Class 2: UPT5//UPT5R/UPTB8 to12

(also add e3 suffix to each part number)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy compound meeting UL94V-0

FINISH: Annealed matte-Tin plating over copper

and readily solderable per MIL-STD-750, method

2026

•

Operating and Storage Temperature: –65ºC to

+150ºC

Peak Pulse Power at 8/20 µs (See Figure 1 and 2)

UPT5Re3: 600 Watts

UPT5e3 thru UPT48e3: 1000 Watts

UPT8Re3 thru UPT48Re3: 1000 Watts

UPTB8e3 thru UPTB48e3: 1000 Watts

Peak Pulse Power at 10/1000 µs (See Figure 2).

UPT5Re3: 100 Watts

•

POLARITY: Cathode or anode to TAB 1 (bottom)

as described in Marking below and Figure 5

MARKING:

Anode to TAB 1: T plus the last two digits of part

number, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪

Cathode to TAB1: U plus last two digits of part

number, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪

Bipolar: B plus the last two digits of part number,

e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.

Please note dot suffix (for e3 suffix)

•

UPT5e3 thru UPT48e3: 150 Watts

UPT8Re3 thru UPT48Re3: 150 Watts

UPTB8e3 thru UPTB48e3: 150 Watts

Impulse Repetition Rate (duty factor): 0.01%

•

WEIGHT: 0.016 gram (approximate)

Thermal resistance: 15ºC/W junction to base tab or

240ºC/W junction to ambient when mounted on FR4

PC board with 1 oz copper

See package dimension on last page

Tape & Reel option: Standard per EIA-481-B using

12 mm tape with 3,000 per 7 inch reel or 12,000

per 13 inch reel (add TR7 or TR13 suffix to part

number)

•

Steady-State Power: 2.5 Watts (base tab ≤112ºC)

Solder Temperatures: 260ºC for 10 s (maximum)

10-15-2007 REV H

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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UPT10E3/TR7 替代型号

型号	品牌	替代类型	描述	数据表
UPT10RE3/TR7	MICROSEMI	完全替代	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10RE3/TR13	MICROSEMI	完全替代	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10E3/TR13	MICROSEMI	类似代替	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与UPT10E3/TR7相关器件

型号	品牌	获取价格	描述	数据表
UPT10R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
UPT10RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10RE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10RE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
UPT10RTR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10RTR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10RTR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
UPT10TR7E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 150W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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