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UPG110P PDF预览

UPG110P

更新时间: 2024-11-17 22:17:15
品牌 Logo 应用领域
日电电子 - NEC 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 52K
描述
2 to 8 GHz WIDE BAND AMPLIFIER CHIP

UPG110P 技术参数

生命周期:Obsolete包装说明:CHIP
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N构造:COMPONENT
增益:12 dB最大输入功率 (CW):10 dBm
最大工作频率:8000 MHz最小工作频率:2000 MHz
最高工作温度:125 °C最低工作温度:-65 °C
射频/微波设备类型:WIDE BAND LOW POWERBase Number Matches:1

UPG110P 数据手册

 浏览型号UPG110P的Datasheet PDF文件第2页浏览型号UPG110P的Datasheet PDF文件第3页浏览型号UPG110P的Datasheet PDF文件第4页浏览型号UPG110P的Datasheet PDF文件第5页浏览型号UPG110P的Datasheet PDF文件第6页浏览型号UPG110P的Datasheet PDF文件第7页 
DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG110P  
2 to 8 GHz WIDE BAND AMPLIFIER CHIP  
DESCRIPTION  
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And  
the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of  
the microwave communication system and the measurement equipment.  
FEATURES  
Ultra wide band : 2 to 8 GHz  
High Power Gain : GP = 15 dB TYP.  
@f = 2 to 8 GHz  
Medium Power : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz  
ORDERING INFORMATION  
PART NUMBER  
FORM  
Chip  
µPG110P  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Supply Voltage  
VDD  
VIN  
+10  
–5 to +0.6  
+10  
V
V
Input Voltage  
Input Power  
Pin  
dBm  
W
Total Power Dissipation  
Operating Temperature  
Storage Temperature  
Ptot*1  
Topr*2  
Tstg  
1.5  
–65 to +125  
–65 to +125  
°C  
°C  
*1 Mounted with AuSn hard solder  
*2 The temperature of base material beside the chip  
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)  
Supply Voltage  
Input Power  
VDD  
+8 ± 0.2  
V
Pin  
–5  
dBm  
Document No. P11882EJ2V0DS00 (2nd edition)  
(Previous No. ID-2454)  
Date Published September 1996 P  
Printed in Japan  
1989  
©

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