UPDS1045

更新时间： 2024-11-20 03:56:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管光电二极管瞄准线功效
页数	文件大小	规格书
4页	311K
描述
10 Amp Schottky Barrier Rectifier PowerDI⑩ 5

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技术参数
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UPDS1045 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	PLASTIC, POWERDI 5, 3 PIN	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
Is Samacsys：	N	其他特性：	LOW LEAKAGE CURRENT, LOW POWER LOSS, FREE WHEELING DIODE
应用：	EFFICIENCY	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.45 V
JESD-30 代码：	R-PDSO-F3	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值正向电流：	275 A
元件数量：	1	相数：	1
端子数量：	3	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大输出电流：	10 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大重复峰值反向电压：	45 V
子类别：	Rectifier Diodes	表面贴装：	YES
技术：	SCHOTTKY	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

UPDS1045 数据手册

UPDS1045

10 Amp Schottky Barrier Rectifier

PowerDI™ 5

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The UPDS1045 offers a small and powerful surface mount package for a

45 Volt 10 Amp rated Schottky with very low forward voltage and low

leakage current. For critical applications requiring very fast switching,

these Schottky higher reverse voltage ratings with their “hot carrier”

features provide extremely fast switching to replace conventional ultrafast

rectifiers. The very low thermal resistance of the PowerDI™5 package

design permits cooler operating junction temperatures for minimal reverse

leakage currents and lower power loss.

PowerDI™5

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Guard ring die construction for transient protection

Low power loss, high efficiency

•

Silicon Schottky (hot carrier) rectifier for minimal

t and elimination of reverse-recovery oscillations

to reduce need for EMI filtering

Low forward voltage drop

For use in high-frequency switching power

supplies, inverters, free wheeling, polarity

protection, and “O-Ring” applications

Low reverse leakage current

High junction temperature capability

High forward surge current capability

Environmentally friendly molding compound (no Br, Sb)

Low inductive parasitics for minimal Ldi/dt effects

•

Low power loss and high efficiency

Robust package configuration for pick-and-place

handling

Lead-Free Finish & RoHS Compliant per EU Directive Rev

13.2.2003 (glass and high temperature solder exemptions

per Annex Notes 5 and 7 therein)

•

Full-metallic bottom eliminates flux entrapment

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction and Storage Temperature (T_J, T_STG): -65 to

+150^oC

•

Case Material: Molded Plastic, Environmentally

Friendly “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Average Rectified Output Current (I_O): 10 Amps for Single

phase, half wave, 60Hz, resistive or inductive load (also

see Figure 5). For capacitive load, derate current by 20%.

•

Moisture sensitivity: Level 1 per J-STD-020C.

Terminals: Finish – Matte Tin annealed over

Copper lead frame (

per JESD97)

Peak Repetitive Reverse Voltage (V_RRM): 45 V Working

Peak Reverse Voltage (V_RWM): 45 V

Solderable per MIL-STD-202, Method 208

•

Marking: See marking information on page 3

DC Blocking Voltage (V_R): 45 V

Polarity: See diagram in “Dimensions &

Schematic” (page 4)

•

RMS Reverse Voltage (V_R(RMS): 32 V

Non-Repetitive Peak Forward Surge Current @ 8.3 ms

Single half sine-wave Superimposed on Rated Load

(I_FSM): 275A

•

Weight: 0.096 grams (approx.)

Tape & Reel Option: 5000/reel (13”)

•

Thermal Resistance Junction to case bottom (R_θJC) or

Soldering Point (R_θJS): 0.8^oC/W

Thermal Resistance (R_θJA): 85^oC/W (Note 1), 70^oC/W

(Note 2), 40^oC/W (Note 3) junction to ambient air (see last

page)

Notes: 1. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)

2. Polyimide PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)

3. Polyimide PCB, 2 oz. Copper with larger Cathode pad dimensions

13.2 mm x 10.1 mm and Anode pad dimensions 4.0 mm x 2.2 mm

8-18-2005 REV 0

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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与UPDS1045相关器件

型号	品牌	获取价格	描述	数据表
UPDS1045E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, GREEN, PLASTIC, P
UPDS3100	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, GREEN, PLASTIC, P
UPDS3100E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, GREEN, PLASTIC, P
UPDS3200E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, GREEN, PLASTIC, P
UPDS340	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, GREEN, PLASTIC, PO
UPDS5100H	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, GREEN, PLASTIC, P
UPDS5100HE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, GREEN, PLASTIC, P
UPDS835L	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, GREEN, PLASTIC, PO
UPDS835LE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, GREEN, PLASTIC, PO
UPDZ80	NEC	获取价格	Digital Signal Processors

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