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UPD5753T7G-E1-A PDF预览

UPD5753T7G-E1-A

更新时间: 2024-11-06 12:33:35
品牌 Logo 应用领域
瑞萨 - RENESAS 半导体消费电路商用集成电路
页数 文件大小 规格书
15页 270K
描述
SiGe/CMOS Integrated Circuit

UPD5753T7G-E1-A 技术参数

生命周期:Obsolete零件包装代码:QFN
包装说明:HVQCCN,针数:20
Reach Compliance Code:unknownHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.81
商用集成电路类型:CONSUMER CIRCUITJESD-30 代码:S-PQCC-N20
长度:4 mm功能数量:1
端子数量:20最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVQCCN封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE认证状态:Not Qualified
座面最大高度:0.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD宽度:4 mm
Base Number Matches:1

UPD5753T7G-E1-A 数据手册

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PreliminaryData Sheet  
μPD5753T7G  
R09DS0014EJ0100  
Rev.1.00  
SiGe/CMOS Integrated Circuit  
Feb 22, 2011  
4 × 2 IF Switch Matrix with Tone/Voltage Controller  
FEATURES  
4 independent IF channels, integral switching to channel input to either channel output  
4 × 2 switch matrix with integrated switch control - Tone/Voltage  
- Switch’s Enable/Disable function is linked with POLA input voltage level  
Switch’s Enable condition : VPOLA > 9.5 V  
Frequency range  
High isolation  
Insertion loss  
: f = 250 MHz to 2150 MHz  
: ISLD/U = 33 dB TYP. @Worst mode  
: LINS = 7 dB TYP. @ ZS = ZL = 50 Ω  
: ΔLINS = 1.0 dB TYP.  
Insertion loss flatness  
20-pin 4 × 4 mm square micro lead package ( 20-pin plastic QFN (0.5 mm pitch))  
APPLICATIONS  
DBS IF switching  
Multiswitch, Switch box  
4 × 2 switching application for microwave signal  
ORDERING INFORMATION  
Part Number  
Order Number  
Package  
Marking  
Supplying Form  
Embossed tape 12 mm wide  
Pin 6 to 10 face the perforation side of the tape  
Qty 5 kpcs/reel  
μPD5753T7G-E1 μPD5753T7G-E1-A 20-pin plastic QFN D5753  
(0.5 mm pitch)  
(Pb-Free)  
Dry packing specification (MSL 3 Equivalent)  
Remark To order evaluation samples, please contact your nearby sales office.  
Part number for sample order: μPD5753T7G  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
R09DS0014EJ0100 Rev.1.00  
Feb 22, 2011  
Page 1 of 13  

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