是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | compliant | 风险等级: | 5.15 |
构造: | COMPONENT | JESD-609代码: | e6 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
射频/微波设备类型: | NARROW BAND MEDIUM POWER | 端子面层: | Tin/Bismuth (Sn/Bi) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPD5747T6J | NEC |
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LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE | |
UPD5747T6J-E4 | NEC |
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LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE | |
UPD5747T6J-E4-A | NEC |
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LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE | |
UPD5750T7D | RENESAS |
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SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function | |
UPD5750T7D-E4A | RENESAS |
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SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function | |
UPD5750T7D-E4A-A | RENESAS |
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SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function | |
UPD5753T7G | RENESAS |
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SiGe/CMOS Integrated Circuit | |
UPD5753T7G-E1 | RENESAS |
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SiGe/CMOS Integrated Circuit | |
UPD5753T7G-E1-A | RENESAS |
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SiGe/CMOS Integrated Circuit | |
UPD5754T7A | RENESAS |
获取价格 |
SiGe/CMOS Integrated Circuit 4 * 2 IF Switch Matrix with Gain and Tone |