Datasheet > UPD5702TU-E2-A

UPD5702TU-E2-A

更新时间： 2024-11-24 12:16:59

品牌	Logo	应用领域
CEL		放大器功率放大器
页数	文件大小	规格书
4页	176K
描述
NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

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数据手册

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UPD5702TU-E2-A 数据手册

NEC's 2.4 GHz

Si LD MOS POWER AMPLIFIER

UPD5702TU

INTERNAL BLOCK DIAGRAM

FEATURES

• MEDIUM OUTPUT POWER:

POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz

Pout2

• ON CHIP OUTPUT POWER CONTROL FUNCTION

Pin2

•

SINGLE SUPPLY VOLTAGE:

VDS = 3.0 V TYP

7 Pin2

Pout2

GND

PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)

SUITABLE FOR HIGH-DENSITY SURFACE MOUNT

GND

DESCRIPTION

Pin1

5 Pout1

NEC's UPD5702TU is a silicon LD MOS IC designed for use as

a power amplifier up to 2.4 GHz application. This IC consists of

two stage amplifiers. The device is packaged in a low cost,

surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack-

age. Ideally suited for high density surface mount designs.

APPLICATIONS

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

• 1.9 GHZ Application Ex. PHS etc.

• 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.

• General purpose medium power AGC amplifier

ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified)

PART NUMBER

UPD5702TU

TYP

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

MAX

IDS

VGS

Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm

Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm

Output Power, PIN = -5 dBm

150

2.0

POUT

PAE

Padj1

Padj2

IRL

dBm

20.5

Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm

Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm

Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm

Input Return Loss, PIN = -20 dBm

-61

-76

dBc

ORL

ISOL

OBW

Output Return Loss, PIN = -20 dBm

Isolation, PIN = -20 dBm

Occupied Bandwidth, PIN = -5 dBm, POUT = +20.5 dBm

TBD

California Eastern Laboratories

12 3 4

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