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UPD5702TU-E2 PDF预览

UPD5702TU-E2

更新时间: 2024-11-20 14:45:27
品牌 Logo 应用领域
日电电子 - NEC 射频微波
页数 文件大小 规格书
11页 66K
描述
Narrow Band Medium Power Amplifier, 2 X 2.20 MM, 0.50 MM HEIGHT, LEADLESS MINIMOLD, PLASTIC, L2MM, 8 PIN

UPD5702TU-E2 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.75
构造:COMPONENT增益:20 dB
最大输入功率 (CW):6 dBmJESD-609代码:e0
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:NARROW BAND MEDIUM POWER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

UPD5702TU-E2 数据手册

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PRELIMINARY DATA SHEET  
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT  
µPD5702TU  
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT  
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS  
DESCRIPTION  
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS  
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin  
L2MM (Lead Less Mini Mold) plastic package.  
FEATURES  
Output Power  
: Pout = +21 dBm MIN. @Pin = 5 dBm, f = 1.9 GHz, VDS = 3.0 V  
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V  
: VDS = 3.0 V TYP.  
Single Supply voltage  
Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.  
APPLICATIONS  
1.9 GHz applications (Example : PHS etc.)  
2.4 GHz applications (Example : Wireless LAN etc.)  
ORDERING INFORMATION  
Part Number  
Package  
8-pin Lead-Less Minimold  
Marking  
5702  
Supplying Form  
8 mm wide embossed taping  
µPD5702TU-E2  
Pin 5, 6, 7, 8 indicates pull-out direction of tape  
Qty 5 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPD5702TU  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10455EJ01V0DS (1st edition)  
Date Published November 2003 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2003  

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