Datasheet > UPD5702TU-E2

UPD5702TU-E2

更新时间： 2024-10-30 14:45:27

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
11页	66K
描述
Narrow Band Medium Power Amplifier, 2 X 2.20 MM, 0.50 MM HEIGHT, LEADLESS MINIMOLD, PLASTIC, L2MM, 8 PIN

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中文翻译

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技术参数
数据手册

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UPD5702TU-E2 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.75
构造：	COMPONENT	增益：	20 dB
最大输入功率 (CW)：	6 dBm	JESD-609代码：	e0
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	NARROW BAND MEDIUM POWER	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

UPD5702TU-E2 数据手册

PRELIMINARY DATA SHEET

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

µPD5702TU

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

DESCRIPTION

The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS

and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin

L2MM (Lead Less Mini Mold) plastic package.

FEATURES

•

Output Power

: Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V

: P^out= +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V

: V^DS= 3.0 V TYP.

•

Single Supply voltage

Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

APPLICATIONS

• 1.9 GHz applications (Example : PHS etc.)

•

2.4 GHz applications (Example : Wireless LAN etc.)

ORDERING INFORMATION

Part Number

Package

8-pin Lead-Less Minimold

Marking

5702

Supplying Form

• 8 mm wide embossed taping

µPD5702TU-E2

• Pin 5, 6, 7, 8 indicates pull-out direction of tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPD5702TU

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10455EJ01V0DS (1st edition)

Date Published November 2003 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2003

12 3 4 5 6 7...11

中文翻译

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