5秒后页面跳转
UPD5702TU PDF预览

UPD5702TU

更新时间: 2024-10-30 12:16:59
品牌 Logo 应用领域
CEL 放大器射频微波功率放大器
页数 文件大小 规格书
4页 176K
描述
NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

UPD5702TU 数据手册

 浏览型号UPD5702TU的Datasheet PDF文件第2页浏览型号UPD5702TU的Datasheet PDF文件第3页浏览型号UPD5702TU的Datasheet PDF文件第4页 
NEC's 2.4 GHz  
Si LD MOS POWER AMPLIFIER  
UPD5702TU  
INTERNAL BLOCK DIAGRAM  
FEATURES  
• MEDIUM OUTPUT POWER:  
POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz  
1
Pout2  
8
• ON CHIP OUTPUT POWER CONTROL FUNCTION  
Pin2  
SINGLE SUPPLY VOLTAGE:  
VDS = 3.0 V TYP  
7 Pin2  
2
3
4
Pout2  
GND  
PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)  
SUITABLE FOR HIGH-DENSITY SURFACE MOUNT  
6
GND  
DESCRIPTION  
Pin1  
5 Pout1  
NEC's UPD5702TU is a silicon LD MOS IC designed for use as  
a power amplifier up to 2.4 GHz application. This IC consists of  
two stage amplifiers. The device is packaged in a low cost,  
surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack-  
age. Ideally suited for high density surface mount designs.  
APPLICATIONS  
NEC's stringent quality assurance and test procedures ensure  
the highest reliability and performance.  
• 1.9 GHZ Application Ex. PHS etc.  
• 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.  
• General purpose medium power AGC amplifier  
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified)  
PART NUMBER  
UPD5702TU  
TYP  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
MAX  
IDS  
VGS  
Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm  
Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm  
Output Power, PIN = -5 dBm  
mA  
V
150  
2.0  
POUT  
PAE  
Padj1  
Padj2  
IRL  
dBm  
%
20.5  
Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm  
Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm  
Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm  
Input Return Loss, PIN = -20 dBm  
27  
-61  
-76  
10  
dBc  
dBc  
dB  
ORL  
ISOL  
OBW  
Output Return Loss, PIN = -20 dBm  
dB  
10  
Isolation, PIN = -20 dBm  
dB  
45  
Occupied Bandwidth, PIN = -5 dBm, POUT = +20.5 dBm  
dB  
TBD  
California Eastern Laboratories  

与UPD5702TU相关器件

型号 品牌 获取价格 描述 数据表
UPD5702TU-E2 NEC

获取价格

Narrow Band Medium Power Amplifier, 2 X 2.20 MM, 0.50 MM HEIGHT, LEADLESS MINIMOLD, PLASTI
UPD5702TU-E2-A CEL

获取价格

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER
UPD5710TK NEC

获取价格

NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH
UPD5710TK-A NEC

获取价格

SPDT, 0MHz Min, 2500MHz Max, 1.2dB Insertion Loss-Max, 1.50 X 1.10 MM, 0.55 MM HEIGHT, LEA
UPD5710TK-E2 NEC

获取价格

暂无描述
UPD5710TK-E2-A NEC

获取价格

NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH
UPD5713TK CEL

获取价格

WIDE BAND SPDT SWITCH
UPD5713TK NEC

获取价格

WIDE BAND SPDT SWITCH
UPD5713TK_1 CEL

获取价格

WIDE BAND SPDT SWITCH
UPD5713TK-A RENESAS

获取价格

UPD5713TK-A