Datasheet > 存储 > SRAM> UPD442000AGU-BB85X-9KH

UPD442000AGU-BB85X-9KH

更新时间： 2024-01-06 21:12:03

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
28页	155K
描述
2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

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DATA SHEET

MOS INTEGRATED CIRCUIT

µPD442000A-X

2M-BIT CMOS STATIC RAM

256K-WORD BY 8-BIT

EXTENDED TEMPERATURE OPERATION

Description

The µPD442000A-X is a high speed, low power, 2,097,152 bits (262,144 words by 8 bits) CMOS static RAM.

The µPD442000A-X has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available.

The µPD442000A-X is packed in 32-pin PLASTIC TSOP (I) (Normal bent) and 32-pin PLASTIC TSOP (I) (Reverse

bent).

Features

• 262,144 words by 8 bits organization

• Fast access time : 55, 70, 85, 100, 120 ns (MAX.)

• Low voltage operation : V^CC= 2.7 to 3.6 V (-BB55X, -BB70X, -BB85X)

V^CC= 2.2 to 3.6 V (-BC70X, -BC85X, -BC10X)

V^CC= 1.8 to 2.2 V (-DD85X, -DD10X, -DD12X)

• Low V^CCdata retention : 1.0 V (MIN.)

• Operating ambient temperature : T^A= –25 to +85 °C

• Output Enable input for easy application

• Two Chip Enable inputs : /CE1, CE2

µPD442000A

Access time Operating supply Operating ambient

Supply current

ns (MAX.)

voltage

temperature

°C

At operating

mA (MAX.)

30 ^Note

At standby At data retention

µA (MAX.)

-BB55X, -BB70X, -BB85X

-BC70X, -BC85X, -BC10X

-DD85X, -DD10X, -DD12X

55, 70, 85

70, 85, 100

85, 100, 120

2.7 to 3.6

2.2 to 3.6

1.8 to 2.2

−25 to +85

1.5

Note Cycle time ≥ 70 ns, -BB55X : 35 mA

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14669EJ7V0DS00 (7th edition)

Date Published October 2002 NS CP (K)

Printed in Japan

The mark ★ shows major revised points.

2000

12 3 4 5 6 7...28

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