Datasheet > 存储 > 闪存> UPD29F064115F9-EB85X-CD6

UPD29F064115F9-EB85X-CD6

更新时间： 2024-11-13 22:12:11

品牌	Logo	应用领域
日电电子 - NEC		闪存存储内存集成电路
页数	文件大小	规格书
32页	249K
描述
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPD29F064115F9-EB85X-CD6 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	11 X 8 MM, TAPE, FBGA-63	针数：	63
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.92
Is Samacsys：	N	最长访问时间：	85 ns
启动块：	BOTTOM/TOP	JESD-30 代码：	R-PBGA-B63
JESD-609代码：	e0	长度：	11 mm
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
端子数量：	63	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	编程电压：	1.8 V
认证状态：	Not Qualified	座面最大高度：	1.07 mm
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.65 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	TIN LEAD	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	类型：	NOR TYPE
宽度：	8 mm	Base Number Matches：	1

UPD29F064115F9-EB85X-CD6 数据手册

浏览型号UPD29F064115F9-EB85X-CD6的Datasheet PDF文件第2页

浏览型号UPD29F064115F9-EB85X-CD6的Datasheet PDF文件第3页

浏览型号UPD29F064115F9-EB85X-CD6的Datasheet PDF文件第4页

浏览型号UPD29F064115F9-EB85X-CD6的Datasheet PDF文件第5页

浏览型号UPD29F064115F9-EB85X-CD6的Datasheet PDF文件第6页

DATA SHEET

MOS INTEGRATED CIRCUIT

µPD29F064115-X

64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY

4M-WORD BY 16-BIT (WORD MODE)

PAGE MODE

Description

The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire

chip can be erased. Memory organization is 4,194,304 words × 16 bits, so that the memory can be programmed in

word units. µPD29F064115-X can be read high speed with page mode.

The µPD29F064115-X can be read while its contents are being erased or programmed. The memory cell is divided

into four banks. While sectors in any bank are being erased or programmed, data can be read from the other three

banks thanks to the simultaneous execution architecture. The banks are 8M bits, 24M bits, 24M bits and 8M bits.

Input /output voltage is supplied to 2.7 to 3.3 V.

Because the µPD29F064115-X enables the boot sector to be erased, it is ideal for storing a boot program. In

addition, program code that controls the flash memory can be also stored, and the program code can be programmed

or erased without the need to load it into RAM. 16 small sectors for storing parameters are provided, each of which

can be erased in 4K words units.

Once a program or erase command sequence has been executed, an automatic program or automatic erase

function internally executes program or erase and verification automatically. The programming time is about 0.5

seconds per sector. The erase time is less than 1 second per sector.

Because the µPD29F064115-X can be electrically erased or programmed by writing an instruction, data can be

reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of

applications.

This flash memory is packed in 48-pin PLASTIC TSOP (I), 63-pin TAPE FBGA and 85-pin TAPE FBGA.

Features

• Four bank organization enabling simultaneous execution of program / erase and read

• High-speed read with page mode

• Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits)

• Memory organization : 4,194,304 words × 16 bits

• Sector organization : 142 sectors (4K words × 16 sectors, 32K words × 126 sectors)

The boot sector is located at the highest address (sector) and the lowest address (sector)

• 3-state output

• Automatic program

• Program suspend / resume

• Unlock bypass program

• Automatic erase

• Chip erase

• Sector erase (sectors can be combined freely)

• Erase suspend / resume

• Program / Erase completion detection

• Detection through data polling and toggle bits

• Detection through RY (/BY) pin

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M16062EJ2V0DS00 (2nd edition)

Date Published September 2002 NS CP (K)

Printed in Japan

The mark # shows major revised points.

2002

12 3 4 5 6 7...32

中文翻译

下载PDF

与UPD29F064115F9-EB85X-CD6相关器件

型号	品牌	获取价格	描述	数据表
UPD29F064115F9-EB90X-CD5	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115F9-EB90X-CD6	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115GZ-DB80X-MJH	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115GZ-DB85X-MJH	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115GZ-EB85X-MJH	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115GZ-EB90X-MJH	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115GZ-MJH	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115-X	NEC	获取价格	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MO
UPD29F064115-YDB85F9-CD5	ETC	获取价格	EEPROM
UPD29F064115-YDB85F9-CD6	ETC	获取价格	EEPROM

与UPD29F064115F9-EB85X-CD6相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD29F064115F9-EB85X-CD6

UPD29F064115F9-EB85X-CD6 技术参数

UPD29F064115F9-EB85X-CD6 数据手册

与UPD29F064115F9-EB85X-CD6相关器件

与UPD29F064115F9-EB85X-CD6相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD29F064115F9-EB85X-CD6

UPD29F064115F9-EB85X-CD6 技术参数

UPD29F064115F9-EB85X-CD6 数据手册

与UPD29F064115F9-EB85X-CD6相关器件

与UPD29F064115F9-EB85X-CD6相关文章

您还可以找

您在本页遇到什么问题？