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UPD29F008ALGZ-C12BX-LJH PDF预览

UPD29F008ALGZ-C12BX-LJH

更新时间: 2024-01-26 01:34:59
品牌 Logo 应用领域
日电电子 - NEC 光电二极管内存集成电路
页数 文件大小 规格书
44页 249K
描述
Flash, 1MX8, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP1-40

UPD29F008ALGZ-C12BX-LJH 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:10 X 20 MM, PLASTIC, TSOP1-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:120 ns启动块:BOTTOM
JESD-30 代码:R-PDSO-G40长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:2.2 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.2 V标称供电电压 (Vsup):2.4 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

UPD29F008ALGZ-C12BX-LJH 数据手册

 浏览型号UPD29F008ALGZ-C12BX-LJH的Datasheet PDF文件第2页浏览型号UPD29F008ALGZ-C12BX-LJH的Datasheet PDF文件第3页浏览型号UPD29F008ALGZ-C12BX-LJH的Datasheet PDF文件第4页浏览型号UPD29F008ALGZ-C12BX-LJH的Datasheet PDF文件第5页浏览型号UPD29F008ALGZ-C12BX-LJH的Datasheet PDF文件第6页浏览型号UPD29F008ALGZ-C12BX-LJH的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD29F008AL-X  
8M-BIT CMOS LOW-VOLTAGE FLASH MEMORY  
1M-WORD BY 8-BIT  
EXTENDED TEMPERATURE OPERATION  
Description  
The µPD29F008AL-X is a low-voltage (2.2 to 2.7 V, 2.7 to 3.6 V) flash memory configured as 8,388,608 bits  
(1,048,576 words × 8 bits) in 19 sectors.  
It is available as a T type in which the boot sector is allocated to the highest address (sector), and a B type in which  
the boot sector is allocated to the lowest address (sector).  
The package is a 40-pin plastic TSOP (I).  
Features  
Word configuration : 1,048,576 words × 8 bits  
Sector configuration : 19 sectors (16 Kbytes × 1 sector, 8 Kbytes × 2 sectors, 32 Kbytes × 1 sector, 64 Kbytes × 15  
sectors)  
2 types of sector configuration  
T type : Boot sector allocated to the highest address (sector)  
B type : Boot sector allocated to the lowest address (sector)  
Automatic program  
Unlock bypass program  
Automatic erase  
Chip erase  
Sector erase (sectors can be combined freely)  
Erase suspend / resume  
Program / Erase completion detection  
Detection through data polling and toggle bits  
Detection through RY (/BY) pin  
Sector protection  
Any sector can be protected  
Any protected sector can be temporary unprotected  
Hardware reset and standby using /RESET pin  
Operating supply  
voltage  
Power supply current  
(Active mode)  
Standby current  
(CMOS level input)  
µA (MAX.)  
Access time  
ns (MAX.)  
Part number  
V (MAX.)  
mA (MAX.)  
µPD29F008AL-BX  
µPD29F008AL-CX  
3.0 +0.6 / –0.3  
2.4 +0.3 / –0.2  
90, 120  
30  
5
120, 150  
Extended operating temperature : 25 to +85 °C  
Program / erase time  
Program : 9.0 µs / byte (TYP.)  
Sector erase : 1.0 s (TYP.)  
Number of program / erase : 100,000 times (MIN.)  
The information in this document is subject to change without notice.  
Document No. M13579EJ3V0DS00 (3rd edition)  
Date Published September 1998 NS CP (K)  
Printed in Japan  
The mark shows major revised points.  
1998  
©

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