UPC8179TB

更新时间： 2024-01-17 19:37:55

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器通信
页数	文件大小	规格书
28页	152K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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中文翻译

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技术参数
数据手册

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UPC8179TB 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.71
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	13 dB	最大输入功率 (CW)：	5 dBm
JESD-609代码：	e0	最大工作频率：	2400 MHz
最小工作频率：	100 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

UPC8179TB 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC8179TB

SILICON MMIC LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This

IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

wideband matched IC. This low current amplifier operates on 3.0 V.

This IC is manufactured using NEC’s 30 GHz f^maxUHS0 (Ultra High Speed Process) silicon bipolar process. This

process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface

from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

Low current consumption

Supply voltage

I^CC= 4.0 mA TYP. @ V^CC= 3.0 V

V^CC= 2.4 to 3.3 V

High efficiency

P^{O (1 dB)}= +3.0 dBm TYP. @ f = 1.0 GHz

P^{O (1 dB)}= +1.5 dBm TYP. @ f = 1.9 GHz

P^{O (1 dB)}= +1.0 dBm TYP. @ f = 2.4 GHz

G^P= 13.5 dB TYP. @ f = 1.0 GHz

G^P= 15.5 dB TYP. @ f = 1.9 GHz

G^P= 15.5 dB TYP. @ f = 2.4 GHz

ISL = 44 dB TYP. @ f = 1.0 GHz

ISL = 42 dB TYP. @ f = 1.9 GHz

ISL = 41 dB TYP. @ f = 2.4 GHz

0.1 to 2.4 GHz (Output port LC matching)

•

Power gain

Excellent isolation

•

Operating frequency

High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

Light weight 7 mg (Standard value)

APPLICATION

•

Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14730EJ2V0DS00 (2nd edition)

Date Published August 2000 N CP(K)

Printed in Japan

2000

12 3 4 5 6 7...28

中文翻译

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与UPC8179TB相关器件

型号	品牌	获取价格	描述	数据表
UPC8179TB_1	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB-E3-A	CEL	获取价格	SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK	CEL	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 2400MHz Max, 1.50 X 1.30 MM, 0.55 MM HEIGHT, LE
UPC8179TK-E2	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E2-A	CEL	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E2-A	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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