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UPC8179TB

更新时间： 2024-01-16 00:12:57
品牌 Logo 应用领域
CEL 放大器射频微波通信
页数 文件大小 规格书
11页 284K
描述
SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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中文翻译

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UPC8179TB 数据手册

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SILICON RFIC LOW  
CURRENT AMPLIFIER  
UPC8179TB  
FOR MOBILE COMMUNICATIONS  
FEATURES  
POWER GAIN vs. FREQUENCY  
•
•
•
HIGH DENSITY SURFACE MOUNTING:  
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)  
+20  
+10  
0
VCC = 3.0 V  
2.4 GHz  
T
A
A
= -40°C  
= +25°C  
SUPPLY VOLTAGE:  
VCC = 2.4 to 3.3 V  
T
T
A
= +85°C  
HIGH EFFICIENCY:  
PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz  
PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz  
PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz  
–10  
–20  
–30  
–40  
•
•
POWER GAIN:  
GP = 13.5 dB TYP at f = 1.0 GHz  
GP = 15.5 dB TYP at f = 1.9 GHz  
GP = 15.5 dB TYP at f = 2.4 GHz  
1.0 GHz  
1.9 GHz  
EXCELLENT ISOLATION:  
1.0  
3.0  
0.1  
0.3  
ISL = 44 dB TYP at f = 1.0 GHz  
ISL = 42 dB TYP at f = 1.9 GHz  
ISL = 41 dB TYP at f = 2.4 GHz  
Output match for best performance  
at each frequency  
•
•
•
LOW CURRENT CONSUMPTION:  
ICC = 4.0 mA TYP AT VCC = 3.0 V  
DESCRIPTION  
OPERATING FREQUENCY:  
ICC = 4.0 mA TYP AT VCC = 3.0 V  
NEC's UPC8179TB is a silicon monolithic integrated circuit  
designed as amplifier for mobile communications. This IC can  
realize low current consumption with external chip inductor  
which can be realized on internal 50Ω wideband matched IC.  
Thislowcurrentamplifierunson3.0V.ThisICismanufactured  
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)  
silicon bipolar process. This process uses direct silicon nitride  
passivation film and gold electrodes. These materials can  
protect the chip surface from pollution and prevent corrosion/  
migration. Thus this IC has exellent performance uniformity  
and reliability.  
LIGHT WEIGHT:  
7 mg (standard Value)  
APPLICATIOIN  
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications  
systems.  
ELECTRICAL CHARACTERISTICS,  
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)  
PART NUMBER  
UPC8179TB  
PACKAGE OUTLINE  
S06  
TYP  
4.0  
SYMBOLS  
ICC  
PARAMETERS AND CONDITIONS  
UNITS  
mA  
MIN  
MAX  
Circuit Current (no input signal)  
2.9  
5.4  
GP  
Power Gain,  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
11.0  
13.0  
13.0  
13.5  
15.5  
15.5  
15.5  
17.5  
17.5  
ISOL  
P1dB  
NF  
Isolation,  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
dB  
dB  
dB  
dB  
39.0  
37.0  
36.0  
44.0  
42.0  
41.0  
–
–
–
Output Power at  
1 dB gain  
compression,  
f = 1.0 GHz  
f = 1.9 GHz  
f = 2.4 GHz  
-0.5  
-2.0  
-3.0  
3.0  
1.5  
1.0  
–
–
–
Noise Figure,  
f = 1.0 GHz  
f = 1.9 GHz  
f = 2.4 GHz  
–
–
–
5.0  
5.0  
5.0  
6.5  
6.5  
6.5  
RLIN  
Input Return Loss,  
(without matching  
circuit)  
f = 1.0 GHz, PIN = -30 dBm  
f = 1.9 GHz, PIN = -30 dBm  
f = 2.4 GHz, PIN = -30 dBm  
4.0  
4.0  
6.0  
7.0  
7.0  
9.0  
–
–
–
California Eastern Laboratories  
1234567...11

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