Datasheet > 射频和微波 > 射频/微波放大器> UPC8178TK-E2

UPC8178TK-E2

更新时间： 2024-11-01 05:52:59

品牌	Logo	应用领域
日电电子 - NEC		放大器通信
页数	文件大小	规格书
27页	301K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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中文翻译

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技术参数
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UPC8178TK-E2 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.12
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	9 dB	最大输入功率 (CW)：	5 dBm
JESD-609代码：	e0	最大工作频率：	2400 MHz
最小工作频率：	1000 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

UPC8178TK-E2 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

PC8178TK

SILICON MMIC LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC

can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

wide band matched IC. µPC8178TK adopts 6-pin lead-less minimold package using same chip as the conventional

µPC8178TB in 6-pin super minimold.

TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50 %.

This IC is manufactured using our 30 GHz f^maxUHS0 (Ultra High Speed Process) silicon bipolar process.

FEATURES

•

Low current consumption

Supply voltage

: ICC = 1.9 mA TYP. @ VCC = 3.0 V

: V^CC= 2.4 to 3.3 V

Excellent isolation

: ISL = 40 dB TYP. @ f = 1.0 GHz

ISL = 41 dB TYP. @ f = 1.9 GHz

ISL = 42 dB TYP. @ f = 2.4 GHz

: G^P= 11.0 dB TYP. @ f = 1.0 GHz

G^P= 11.0 dB TYP. @ f = 1.9 GHz

G^P= 11.0 dB TYP. @ f = 2.4 GHz

•

Power gain

Gain 1 dB compression output power : P^{O (1 dB)}= −5.5 dBm TYP. @ f = 1.0 GHz

P^{O (1 dB)}= −8.0 dBm TYP. @ f = 1.9 GHz

P^{O (1 dB)}= −8.0 dBm TYP. @ f = 2.4 GHz

•

Operating frequency

High-density surface mounting

Light weight

: 0.1 to 2.4 GHz (Output port LC matching)

: 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm)

: 3 mg (Standard value)

APPLICAION

•

Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10063EJ02V0DS (2nd edition)

Date Published March 2005 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2001, 2005

12 3 4 5 6 7...27

中文翻译

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与UPC8178TK-E2相关器件

型号	品牌	获取价格	描述	数据表
UPC8178TK-E2-A	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB	CEL	获取价格	SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB_1	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB-E3	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TB-E3-A	CEL	获取价格	SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK	CEL	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK	NEC	获取价格	SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8179TK-A	NEC	获取价格	Wide Band Low Power Amplifier, 100MHz Min, 2400MHz Max, 1.50 X 1.30 MM, 0.55 MM HEIGHT, LE

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