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UPC8178TB PDF预览

UPC8178TB

更新时间: 2024-09-14 04:26:51
品牌 Logo 应用领域
日电电子 - NEC 放大器通信
页数 文件大小 规格书
28页 152K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

UPC8178TB 数据手册

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DATA SHEET  
BIPOLAR ANALOG INTEGRATED CIRCUIT  
µPC8179TB  
SILICON MMIC LOW CURRENT AMPLIFIER  
FOR MOBILE COMMUNICATIONS  
DESCRIPTION  
The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This  
IC can realize low current consumption with external chip inductor which can not be realized on internal 50  
wideband matched IC. This low current amplifier operates on 3.0 V.  
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This  
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface  
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.  
FEATURES  
Low current consumption  
Supply voltage  
:
:
:
ICC = 4.0 mA TYP. @ VCC = 3.0 V  
VCC = 2.4 to 3.3 V  
High efficiency  
PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz  
PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz  
PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz  
GP = 13.5 dB TYP. @ f = 1.0 GHz  
GP = 15.5 dB TYP. @ f = 1.9 GHz  
GP = 15.5 dB TYP. @ f = 2.4 GHz  
ISL = 44 dB TYP. @ f = 1.0 GHz  
ISL = 42 dB TYP. @ f = 1.9 GHz  
ISL = 41 dB TYP. @ f = 2.4 GHz  
0.1 to 2.4 GHz (Output port LC matching)  
Power gain  
:
:
:
Excellent isolation  
Operating frequency  
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
Light weight 7 mg (Standard value)  
:
APPLICATION  
Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system  
Caution Electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P14730EJ2V0DS00 (2nd edition)  
Date Published August 2000 N CP(K)  
Printed in Japan  
©
2000  

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