Datasheet > UPC8112TB-E3-A

UPC8112TB-E3-A

更新时间： 2024-02-02 18:42:12

品牌	Logo	应用领域
CEL		转换器电信集成电路光电二极管 ISM频段
页数	文件大小	规格书
5页	173K
描述
3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER

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UPC8112TB-E3-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	PLASTIC, SMT-6	针数：	6
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
Factory Lead Time：	1 week	风险等级：	5.27
Is Samacsys：	N	Base Number Matches：	1

UPC8112TB-E3-A 数据手册

3 V SILICON MMIC L-BAND

FREQUENCY DOWN CONVERTER

UPC8112TB

FEATURES

INTERNAL BLOCK DIAGRAM

•

HIGH DENSITY SURFACE MOUNTING:

6 Pin Super Minimold or SOT-363 Package

Output

Input

•

BROADBAND OPERATION:

RF = 0.8 to 2.0 GHz

IF = 100 to 300 MHz

•

INPUT IP3: -7 dBm

POWER SAVE FUNCTION

POWER

SAVE

•

SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V

DESCRIPTION

Input

GND

VCC

NEC's UPC8112TB is a silicon RFIC manufactured using the

NESAT III process. This device consists of a mixer, an IF

amplifier and a LO buffer amplifier. This device is suitable as

a 1st IF downconverter for the receiver stage of cellular and

other wireless systems. The UPC8112TB is pin compatible

andhascomparableperformanceasthelargerUPC8112T,so

it is suitable for use as a replacement to help reduce system

size. The IC is housed in a 6 pin super minimold or SOT-363

package.

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS ^(TA = 25 °C, VCC = VPS = 3.0 V, PLO = -10 dBm)

PART NUMBER

PACKAGE OUTLINE

UPC8112TB

S06

SYMBOLS

PARAMETERS AND CONDITIONS

Circuit Current (no input signal) VCC = 3.0 V

VPS = 0.5 V

UNITS

MIN

TYP

MAX

11.7

0.1

ICC

4.9

8.5

µA

fRFin

fIFout

RF Frequency Response

IF Frequency Response¹

GHz

MHz

0.8

100

11.5

1.9

2.0

250

300

17.5

Conversion Gain

fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

9.5

15.5

Single Side Band Noise Figure (SSB)

fRFin = 900 MHz, fLOin = 1000 MHz

9.0

11.2

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

13.2

P1dB

PSAT

Output Power at 1 dB gain compression, fRFin = 1.9 GHz

fLOin = 1.66 GHz

dBm

-5

Saturated Output Power

fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

(PRFin = -10 dBm)

dBm

-6.5

-7

-2.5

-3

IIP3

Input 3rd Order Intercept Point,

fRFIN = 900 MHz, fLOIN = 1000 MHz

dBm

-10

-9

-7

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

LORF

LOIF

LO Leakage at RF pin, fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-45

-46

-45

fRFin = 1.9 GHz, fLOin = 1.66 GHz

LO Leakage at IF pin, fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-32

-33

-30

fRFin = 1.9 GHz, fLOin = 1.66 GHz

RFLO

RF Leakage at LO Pin fRFin = 900 MHz, fLOin = 1000 MHz²

fRFin = 1.5 GHz, fLOin = 1.6 GHz²

dBm

-80

-57

-55

fRFin = 1.9 GHz, fLOin = 1.66 GHz²

RTH(JA)

Thermal Resistance (Junction to Ambient) Mounted on a

50 x 50 x 1.6 mm epoxy glass PWB

°C/W

325

Notes:

1. External matching required.

2. PRFin = -30 dBm

California Eastern Laboratories

12 3 4 5

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