DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The μPC3236TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as IF amplifier for
DBS LNB.
This device exhibits low noise figure and high power gain characteristics.
This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process.
FEATURES
•
•
Low current
: ICC = 24.0 mA TYP.
Medium output power
: PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz
: PO (sat) = +10.5 dBm TYP. @ f = 2.2 GHz
: PO (1dB) = +11 dBm TYP. @ f = 1.0 GHz
: PO (1dB) = +7.5 dBm TYP. @ f = 2.2 GHz
: GP = 38 dB TYP. @ f = 1.0 GHz
: GP = 38 dB TYP. @ f = 2.2 GHz
•
•
High linearity
Power gain
•
•
Gain flatness
Noise Figure
: ΔG = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
P
: NF = 2.6 dB TYP. @ f = 1.0 GHz
: NF = 2.6 dB TYP. @ f = 2.2 GHz
: VCC = 4.5 to 5.5 V
•
•
Supply voltage
Port impedance
: input/output 50 Ω
APPLICATIONS
•
IF amplifiers in DBS LNB, other L-band amplifiers, etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
6U
Supplying Form
• Embossed tape 8 mm wide
μPC3236TK-E2
μPC3236TK-E2-A 6-pin lead-less minimold
(1511 PKG) (Pb-Free)
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order: μPC3236TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10734EJ01V0DS (1st edition)
Date Published December 2008 NS
Printed in Japan
2008