UPC3225TB

更新时间： 2024-10-30 07:05:31

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器功率放大器输出元件
页数	文件大小	规格书
17页	156K
描述
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER

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技术参数
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UPC3225TB 技术参数

生命周期：	Transferred	包装说明：	SUPER MINIMOLD-6
Reach Compliance Code：	unknown	风险等级：	5.69
Is Samacsys：	N	构造：	COMPONENT
增益：	22 dB	最大输入功率 (CW)：	10 dBm
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

UPC3225TB 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

PC3225TB

5 V, SILICON GERMANIUM MMIC

MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION

The µPC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS

tuners. This IC is manufactured using our 50 GHz f^maxUHS2 (Ultra High Speed Process) SiGe bipolar process.

FEATURES

•

Wideband response

Low current

: fu = 2.8 GHz TYP. @ 3 dB bandwidth

: I^CC= 24.5 mA TYP.

Medium output power

: P^{O (sat)}= +15.5 dBm TYP. @ f = 0.95GHz

: P^{O (sat)}= +12.5 dBm TYP. @ f = 2.15 GHz

: P^{O (1dB)}= +9.0 dBm TYP. @ f = 0.95 GHz

: P^{O (1dB)}= +7.0 dBm TYP. @ f = 2.15 GHz

: G^P= 32.5 dB TYP. @ f = 0.95 GHz

: G^P= 33.5 dB TYP. @ f = 2.15 GHz

: NF = 3.7 dB TYP. @ f = 0.95 GHz

: NF = 3.7 dB TYP. @ f = 2.15 GHz

: V^CC= 4.5 to 5.5 V

•

High linearity

Power gain

Noise Figure

•

Supply voltage

Port impedance

: input/output 50 Ω

APPLICATIONS

•

IF amplifiers in LNB for DBS converters etc.

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

C3M

Supplying Form

Embossed tape 8 mm wide.

µPC3225TB-E3

µPC3225TB-E3-A 6-pin super minimold

(Pb-Free)^Note

1, 2, 3 pins face the perforation side of the tape.

Qty 3 kpcs/reel.

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, please contact your nearby sales office

Part number for sample order: µPC3225TB.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10500EJ01V0DS (1st edition)

Date Published December 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices, Ltd. 2004

12 3 4 5 6 7...17

中文翻译

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与UPC3225TB相关器件

型号	品牌	获取价格	描述	数据表
UPC3225TB-E3	CEL	获取价格	BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3225TB-E3	NEC	获取价格	5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
UPC3225TB-E3-A	CEL	获取价格	BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3225TB-E3-A	NEC	获取价格	5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
UPC3226TB	CEL	获取价格	BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3226TB	NEC	获取价格	5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
UPC3226TB-E3	CEL	获取价格	BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC3226TB-E3	NEC	获取价格	5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
UPC3226TB-E3-A	NEC	获取价格	5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
UPC3226TB-E3-A	CEL	获取价格	BIPOLAR ANALOG INTEGRATED CIRCUIT

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