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UPC3224TB-E3 PDF预览

UPC3224TB-E3

更新时间: 2024-10-30 06:02:27
品牌 Logo 应用领域
日电电子 - NEC 射频和微波射频放大器微波放大器
页数 文件大小 规格书
15页 87K
描述
5 V, SILICON MMIC WIDEBAND AMPLIFIER

UPC3224TB-E3 技术参数

是否Rohs认证:不符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.72
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:18.5 dB
最大输入功率 (CW):10 dBmJESD-609代码:e0
最大工作频率:2200 MHz最小工作频率:1000 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND LOW POWER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

UPC3224TB-E3 数据手册

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DATA SHEET  
BIPOLAR ANALOG INTEGRATED CIRCUIT  
µPC3224TB  
5 V, SILICON MMIC  
WIDEBAND AMPLIFIER  
DESCRIPTION  
The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using  
our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.  
FEATURES  
Wideband response : fu = 3.2 GHz TYP. @ 3 dB bandwidth  
Low current  
Power gain  
: ICC = 9.0 mA TYP.  
: GP = 21.5 dB TYP. @ f = 1.0 GHz  
: GP = 21.5 dB TYP. @ f = 2.2 GHz  
: VCC = 4.5 to 5.5 V  
Supply voltage  
Port impedance  
: input/output 50  
APPLICATION  
IF amplifiers in DBS converters etc.  
ORDERING INFORMATION  
Part Number  
Package  
6-pin super minimold  
Marking  
C3K  
Supplying Form  
Embossed tape 8 mm wide  
µPC3224TB-E3  
1, 2, 3 pins face the perforation side of tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPC3224TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10490EJ01V0DS (1st edition)  
Date Published May 2004 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2004  

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